最新进展！Intel 18A产品，成功点亮！

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Intel 18A 芯片现已上电运行，并顺利启动操作系统。

将用于明年推出的新一代客户端和服务器产品。

外部客户产品将于明年上半年完成流片。

英特尔宣布，基于 Intel 18A 制程节点打造的首批产品——AI PC 客户端处理器 Panther Lake 和服务器处理器 Clearwater Forest，其样片现已出厂、上电运行并顺利启动操作系统。距离流片仅隔不到两个季度，英特尔便再次取得了突破性进展。目前，Panther Lake 和 Clearwater Forest 均进展顺利，预计将于2025年开始量产。此外，英特尔还宣布，采用 Intel 18A 的首家外部客户预计将于明年上半年完成流片。

面向 AI 时代，我们正在推进多项前沿系统级代工技术，为英特尔产品部门和我们的代工客户提供对下一代产品至关重要的全栈式创新。我们为 Intel 18A 目前取得的进展感到鼓舞，并正与客户密切合作，目标是在2025年将 Intel 18A 推向市场。

——Kevin O’Buckley

英特尔公司高级副总裁兼代工服务总经理

上个月，英特尔发布了 Intel 18A PDK（制程设计套件）的1.0版本，让代工客户能够在基于 Intel 18A 的芯片设计中利用 RibbonFET 全环绕栅极晶体管架构和 PowerVia 背面供电技术。EDA 和 IP 合作伙伴正在完善对 Intel 18A 的支持，以便其客户能够展开新产品的设计。

这些进展表明，英特尔代工率先在向客户开放的制程节点上实现了RibbonFET全环绕栅极晶体管和 PowerVia 背面供电技术的结合。借助生态系统提供的EDA和IP工具以及工艺流程，RibbonFET和 PowerVia 这两项突破性的创新技术将通过 Intel 18A 向代工客户提供。英特尔代工凭借其有韧性、更可持续、更可靠的制造能力和供应链，以及业界领先的先进封装技术，整合了设计和制造下一代规模更大、运行更高效的AI解决方案所需的要素。

在没有额外配置或修改的情况下，Panther Lake 和 Clearwater Forest 能够顺利启动操作系统，清楚地表明了 Intel 18A 的良好状况——英特尔预计将于2025年通过这一先进制程技术重获制程领先性。Panther Lake 的 DDR 内存性能已达到目标频率，同样体现了 Intel 18A 的顺利进展。将于明年首次大规模生产的 Clearwater Forest，提供了未来 CPU 和 AI 芯片的设计蓝图，结合了 RibbonFET 全环绕栅极晶体管、PowerVia 背面供电和 Foveros Direct 3D 先进封装技术的高性能解决方案，以实现更高密度和功率处理能力。Clearwater Forest 也将是采用 Intel 3-T base-die 技术的首款产品。依托英特尔代工的系统级代工能力，Panther Lake 和 Clearwater Forest 有望在每瓦性能、晶体管密度和单元利用率方面实现显著提升。

英特尔的 EDA 和 IP 合作伙伴已于7月获得了 Intel 18A PDK 1.0版本的访问权限，正在更新其工具和设计流程，以便外部代工客户开始基于 Intel 18A 的芯片设计。这是英特尔代工业务的一个关键里程碑。

通过提供业界领先的EDA和专为Intel 18A优化的IP，Cadence与英特尔代工的战略合作能够帮助我们的共同客户加速创新。Intel 18A的最新进展令人鼓舞，我们也很高兴能在基于Intel 18A的先进设计上为客户提供支持。

——Tom Beckley

Cadence高级副总裁兼

定制IC和PCB事业部总经理

很高兴看到英特尔代工抵达关键里程碑。英特尔代工已准备好为客户提供Intel 18A制程节点，并正在将设计下一代AI解决方案所需的各要素整合在一起，这正是我们的共同客户需要和期待的。作为芯片设计公司和代工厂之间的桥梁，Synopsys在全球晶圆代工行业中起着重要作用，我们很荣幸能与英特尔代工合作，面向英特尔的先进制程节点提供Synopsys领先的EDA和IP解决方案。

——Shankar Krishnamoorthy

Synopsys EDA事业部总经理

RibbonFET 全环绕栅极晶体管架构和 PowerVia 背面供电技术是 Intel 18A 的两项核心技术，有助于处理器的进一步微缩及其能效的持续提升，这正是推动 AI 计算的发展所需要的。RibbonFET 能够严格控制晶体管沟道中的电流，有助于芯片组件的进一步小型化，同时可以减少漏电，随着芯片密度的持续提升，这一点变得非常重要。PowerVia 则通过将电源线移至晶圆背面，优化了信号路由，进而降低了电阻，提高了能效比。RibbonFET 和 PowerVia 的强强联合有望大幅提高未来电子设备的计算性能和电池寿命。英特尔率先将结合了全环绕栅极晶体管架构和背面供电技术的制程节点推向市场，将使全球代工客户受益。

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Given these risks and uncertainties, readers are cautioned not to place undue reliance on such forward-looking statements. Readers are urged to carefully review and consider the various disclosures made in this news byte and in other documents we file from time to time with the SEC that disclose risks and uncertainties that may affect our business.

Unless specifically indicated otherwise, the forward-looking statements in this news byte do not reflect the potential impact of any divestitures, mergers, acquisitions, or other business combinations that have not been completed as of the date of this filing. In addition, the forward-looking statements in this news byte are based on management's expectations as of the date of this news byte, unless an earlier date is specified, including expectations based on third-party information and projections that management believes to be reputable. We do not undertake, and expressly disclaim any duty, to update such statements, whether as a result of new information, new developments, or otherwise, except to the extent that disclosure may be required by law.

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