Semiconductor 技术 - DeckBulid 基本代码笔记

软件链接: http://download.csdn.net/download/qq_33443989/9935334

1<. First

go Athena
##This is a simple exercise## 

Line x location = 0.0 spacing = 0.2
Line x location = 1.0 spacing = 0.1
Line y location = 0.0 spacing = 0.2
Line y location = 1.0 spacing = 0.1

## 1E15 = 1 * 10^15 ##
initialize SILICON C.BORON=1E15 two.d

structure outfile = netdefine.str

TonyPlot -st netdefine.str
quit

---

2<. Second

go athena

##define Network##

line x location=0.0 spacing=0.1
line x location=1.0 spacing=0.1
line y location=0.0 spacing=0.2
line y location=2.0 spacing=0.2

initial two.d silicon c.boron=1e16 orien = 110

Diffuse time=30 temp=1000 dryo2

extract name = "Tox" thickness oxide mat.occno = 1 x.val = 0

structure outfile=oxidation.str

tonyplot -st oxidation.str

quit

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3<. Three

go athena

line x loc = 0.0 spac = 0.02
line x loc = 1.0 spac = 0.01
line y loc = 0.0 spac = 0.01
line y loc = 2.0 spac = 0.02

init silicon c.phos = 1.0e12 orient = 110 

diffuse time = 100 temp = 600 c.boron = 1e20
extract name = "xj" xj silicon mat.occno = 1 x.val = 0.0 junc.occno = 1
structure outfile = diffuse1.str

diffuse time = 30 temp = 1100
extract name = "xj" xj silicon mat.occno = 1 x.val = 0.0 junc.occno = 1
structure outfile = diffuse2.str

tonyplot -st diffuse1.str
tonyplot -st diffuse2.str

quit

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4<. Four

go athena

line x loc = 0.0 spacing = 0.2
line x loc = 4   spacing = 0.2
line y loc = 0.0 spacing = 0.1
line y loc = 1.0 spacing = 0.1

init silicon two.d orient = 100

diffuse time = 30 temp = 1000 weto2
extrac name = "Tox" thickness oxide mat.occno = 1 x.val = 0
tonyplot

etch oxide left p1.x = 0.5
tonyplot

etch oxide start x = 1.5 y = 0.0
etch continue x = 1.5 y = 0.6
etch continue x = 3.5 y = 0.6
etch done x = 3.5 y = 0.0

tonyplot

quit

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2．请编写“氧化工艺”仿真程序。

要求：二维仿真，P型硅衬底，<111>晶向，掺杂浓度1e16，干氧氧化，氧化温度1000摄氏度，氧化时间60分钟，结构文件命名为Oxidation。

go athena
 
line x location=0.0 spacing=0.01
line x location=1.0 spacing=0.10
line y location=0.0 spacing=0.02
line y location=2.0 spacing=0.20
 
init silicon ori=111 c.boron=1e16two.d
 
diffuse time=60 temp=1000 dryo2
 
structure outfile=oxidation.str
 
tonyplot -st oxidation.str

---

3．请编写“离子注入工艺”仿真程序。

要求：一维仿真，N型硅衬底，<100>晶向，掺杂浓度1e16，磷离子剂量1e13，离子能量100KeV，注入角度7°，1000摄氏度退火30分钟，结构文件命名为implant。

go athena
 
line x location=0.0 spacing=0.01
line x location=1.0 spacing=0.10
line y location=0.0 spacing=0.02
line y location=2.0 spacing=0.20
 
init silicon c. phosph=1e16 ori=100
 
implant phosph dose=1e13energy=100 tilt=7
 
diffuse time=30temperature=1000
 
structureoutfile=implant.str
 
tonyplot -st implant.str