高功率激光二极管在运行中由于活性区域内部产生扩展缺陷导致快速且灾难性的退化。热点区域作为驱动力源，促进晶体缺陷的形成。退化阈值功率对封装应力极其敏感，并且多层结构的热导率也对其有影响。量子阱和势垒的热导率因低维性质和界面质量而降低，是激光二极管退化的主要因素。通过对热点引起的热应力建模，可以解析高功率激光二极管的退化机制。
摘要：
Rapid and catastrophic degradation of high power laser diodes occur because of the generation of extended defects inside the active parts of the laser structure during the laser operation. Local hot spots play a major role as actuators of the driven force leading to the formation of extended crystal defects. The laser power threshold for degradation is very sensitive to the packaging induced stress, and the thermal conductivity of the multilayer structure. The thermal conductivity of the QW and the barriers is suppressed by the low dimensionality but also by the quality of the interfaces being a major actor of the laser diode degradation. Modelling the thermal stresses induced by the hot spots in the active region of the diode permits to describe the degradation mechanisms of high power laser diodes.
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