signature=ddd5150b1da9eebcbab4d57cf9321a88,Signature of optical absorption in highly strained and pa...

摘要：

Signature of optical absorption in highly strained and partially relaxed InP/GaAs type-II quantum wellsuperlattice structures is clearly observed at room temperature. Strong coupling effects between the wavefunctions of confined carriers in the neighbouring quantum wells of InP/GaAs type-II superlattice structures are observed in electroreflectance (ER) spectra. Only ER measurements provide clear signatures of the superlattice feature for partially relaxed superlattice structures. However, both ER and photoreflectance (PR) measurements provide the signature of superlattice features for highly strained superlattice structures. A possible explanation is given in terms of the trapping of photogenerated carriers at defect/trap levels generated by the partial relaxation or due to the presence of oscillatory features in PR spectra. ER being a direct modulation technique, where one applies an external electric field to modulate the built-in electric field, is therefore preferred over PR. Increase in the surface photovoltage magnitude for energies lower than the band edge position of GaAsbuffer layer confirms that the absorption takes place between the electronic minibands formed in the type-II superlattice structures.

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