摩尔的极限——基于单元原子半导体的固态量子计算设

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“通过将一个磷原子引入一个硅晶格，一组调查者制造出了一个单原子半导体。通过使用扫描隧道显微镜和耐氢平版印刷技术，Martin Fuechsle 等人将磷原子准确地放置在了非常狭小的硅引线之间，使他们得以测量其电学行为。结果清楚地显示，磷原子的内部量子转变和其半导体行为都可以为我们读取。没 有更小的固态设备有这种可能了。诸如此类的固态量子计算设备系统，反映了摩尔定律——关于技术小型化的那个著名的预言——的极限。”


一个单原子半导体的电子显微图。图像中央的凸起正是单个磷原子被引入硅晶格的地方；两角的矩形状物体是该半导体的引线，同样也由硅制造。
Electron micrograph of a single-atom transistor. The bump at the image center is where a single phosphorous atom was introduced to a silicon lattice; the rectangular items in the corners are the leads of the transistor, also fabricated of silicon.




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英文原文：
We can do no Moore: a transistor from single atom
posted by Thom Holwerda on Mon 20th Feb 2012 22:53 UTC
"A group of researchers has fabricated a single-atom transistor by introducing one phosphorous atom into a silicon lattice. Through the use of a scanning tunnelling microscope and hydrogen-resist lithography, Martin Fuechsle et al. placed the phosphorous atom precisely between very thin silicon leads, allowing them to measure its electrical behavior. The results show clearly that we can read both the quantum transitions within the phosphorous atom and its transistor behavior. No smaller solid-state devices are possible, so systems of this type reveal the limit of Moore's law - the prediction about the miniaturization of technology - while pointing toward solid-state quantum computing devices."   

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