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MJD122 — NPN Silicon Darlington Transistor

March 2016

MJD122

NPN Silicon Darlington Transistor

Features

•

•

•

•

•

•

D-PAK for Surface Mount Applications

High DC Current Gain

Built-in a Damper Diode at E-C

Lead Formed for Surface Mount Applications

Electrically Similar to Popular TIP122

Complement to MJD127

Equivalent Circuit

C

B

1

D-PAK

2.Collector

3.Emitter

R1

R2

E

1.Base

R1



8k

R2



0.12k

Ordering Information

Part Number

MJD122TF

Top Mark

MJD122

Package

TO-252 3L (DPAK)

Packing Method

Tape and Reel

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be oper-

able above the recommended operating conditions and stressing the parts to these levels is not recommended. In

addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only. Values are at T

A

= 25°C unless otherwise noted.

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

Parameter

Value

100

100

5

8

16

120

20

1.75

150

- 65 to 150

Units

V

V

V

A

A

mA

W

W

C

C

Collector Dissipation (T

C

= 25C)

Collector Dissipation (T

A

= 25C)

Junction Temperature

Storage Temperature

© 1999 Fairchild Semiconductor Corporation

MJD122 Rev. 2.4

www.fairchildsemi.com

MJD122 — NPN Silicon Darlington Transistor

Electrical Characteristics

Values are at T

A

= 25°C unless otherwise noted

.

Symbol

V

CEO

(sus)

I

CEO

I

CBO

I

EBO

h

FE

V

CE

(sat)

V

BE

(sat)

V

BE

(on)

C

ob

Parameter

Collector-Emitter Sustaining Voltage

(1)

Collector Cut-off Current

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

(1)

Test Condition

I

C

= 30 mA, I

B

= 0

V

CE

= 50 V, I

B

= 0

V

CB

= 100 V, I

E

= 0

V

EB

= 5 V, I

C

= 0

V

CE

= 4 V, I

C

= 4 A

V

CE

= 4 V, I

C

= 8 A

Min.

100

Max.

Units

V

10

10

2

1000

100

12K

2

4

4.5

2.8

200

A

A

mA

Collector-Emitter Saturation Voltage

(1)

I

C

= 4 A, I

B

= 16 mA

I

C

= 8 A, I

B

= 80 mA

Base-Emitter Saturation Voltage

(1)

Base-Emitter On Voltage

(1)

Output Capacitance

I

C

= 8 A, I

B

= 80 mA

V

CE

= 4 V, I

C

= 4 A

V

CB

= 10 V, I

E

= 0

f= 0.1MHz

V

V

V

V

pF

Note:

1. Pulse test: pw300

s,

duty cycle

2%.

© 1999 Fairchild Semiconductor Corporation

MJD122 Rev. 2.4

www.fairchildsemi.com

2

MJD122 — NPN Silicon Darlington Transistor

Typical Performance Characteristics

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

10

10k

V

CE

= 4V

I

C

= 250 I

B

V

BE

(sat)

1

h

FE

, DC CURRENT GAIN

V

CE

(sat)

1k

0.1

100

0.1

1

10

0.01

0.1

1

10

100

I

C

[A], COLLECTOR CURRENT

I

C

[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000

10

C

ob

[pF], CAPACITANCE

100

t

R

,t

D

[



s], TURN ON TIME

V

CC

= 30V

I

C

=250I

B

I

B1

=I

B2

1

t

R

t

D

, V

BE

(off)=0

0.1

10

1

0.1

1

10

100

0.01

0.1

1

10

V

CB

[V], COLLECTOR-BASE VOLTAGE

I

C

[A], COLLECTOR CURRENT

Figure 3. Collector Output Capacitance

Figure 4. Turn On Time

10

100

V

CC

=30V

I

C

=250I

B

I

C

[A], COLLECTOR CURRENT

t

STG

,t

F

[



s], TURN OFF TIME

10

t

STG

1

t

F

1

1m

5m

s

D

s

C

10

0



s

50

0



s

0.1

0.1

0.1

0.01

1

10

1

10

100

1000

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Turn Off Time

Figure 6. Safe Operating Area

© 1999 Fairchild Semiconductor Corporation

MJD122 Rev. 2.4

www.fairchildsemi.com

3

MJD122 — NPN Silicon Darlington Transistor

Typical Performance Characteristics

(Continued)

25

P

C

[W], POWER DISSIPATION

20

15

10

5

0

0

25

50

o

75

100

125

150

175

T

C

[ C], CASE TEMPERATURE

Figure 7. Power Derating Curve

© 1999 Fairchild Semiconductor Corporation

MJD122 Rev. 2.4

www.fairchildsemi.com

4