本文展示了量子点器件在不同门电压和温度下的特性。在175mT和60mK下，安德烈夫边界态穿过零偏压，特别是在-5V附近。从-10到5V观察到零能隙峰（ZBP），尽管在某些区域不明显。7.5到10V范围内出现分裂峰。在50mK时，改变门4的电压显示了零偏压峰的出现和消失。随着温度升高至300mK，ZBP的特征有所减弱，峰宽保持在20μeV。这些数据揭示了量子点器件中复杂的电荷和能量调控机制。
摘要：
Fig. 3. Gate voltage dependence. (A) 2D color plot of dI/dV versus V and voltage on gate 2 at 175 mT and 60 mK. An- dreev bound states cross through zero bias, for example near -5 V (dotted lines). The ZBP is visible from -10 to ~5 V (although in this color setting it is not equally visible every- where). Split peaks are observed in the range of 7.5 to 10 V (20). In (B) and (C) we compare voltage sweeps on gate 4 for 0 and 200 mT with the zero bias peak absent and pre- sent, respectively. Temperature is 50 mK. [Note that in (C) the peak extends all the way to -10 V (19).] (D) Temperature dependence. dI/dV versus V at 150 mT. Traces have an off- set for clarity (except for the lowest trace). Traces are taken at different temperatures (from bottom to top: 60, 100, 125, 150, 175, 200, 225, 250, and 300 mK). dI/dV outside ZBP at V = 100 μeV is 0.12 ± 0.01*2e2/h for all temperatures. A full- width at half-maximum of 20 μeV is measured between ar- rows. All data in this figure are from device 1.
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