matlab开关参数测,SiC功率MOSFET参数测量及开关暂态过程建模

Parameter measurement and switch transient analysis of SiC Power MOSFET

CHEN Sitong

1

陈思彤(1996-)，女，主要研究方向：碳化硅功率器件建模

GAO Qiang

1

高强(1964-)，男，教授，博导，主要研究方向：大功率电机驱动

1、Harbin Institute of Technology,College of electrical engineering and automation,Harbin 150001

Abstract：Silicon carbide power devices are becoming more and more popular because of their good heat resistance, higher opening speed and low on resistance. In this paper, the transient process of SiC Power MOSFET switch is analyzed, the static characteristics test platform of SiC Power MOSFET is built, and its static characteristics, output characteristics, transfer characteristics, threshold voltage, on resistance, junction capacitance are measured, analyzed and modeled; the transient circuit level analysis model of SiC Power MOSFET switch considering the influence of circuit parasitic parameters is established based on the established model Based on the differential equation, the switch transient process of SiC Power MOSFET is analyzed. Based on the differential equation, the switch transient model is established in MATLAB, which can simulate the switch transient process. The influence of driving resistance and parasitic inductance on the switch transient process is analyzed.