本文介绍了一种新型的G(V)技术在检测有机半导体中多种陷阱分布的应用。G-V特性曲线显示出高斯陷阱和指数陷阱显著不同的特征，使得能够轻松识别不同类型陷阱的存在。通过数值模拟及P3HT和P3HT/PCBM共混物二极管的实验结果，证实了浅陷阱和深陷阱的不同分布情况。
摘要：
Traps are commonly found in organic semiconductors and their presence distinctly distorts the current-voltage (I - V) characteristics of an organic diode. The present work describes the application of the recently proposed G(V) technique in detecting the presence of multiple trap distribution. G - V characteristics show significantly different signatures of Gaussian and exponential traps which allow easy detection of more than one type of trap distribution. Numerical simulations coupled with experimental results of Poly-(3-hexylthiophene) (P3HT) and blends of P3HT and [6,6] phenyl C61 butyric acid methyl ester (PCBM) diodes show the presence of shallow and deep traps with different distributions.
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