中国科学院大学计算机金智,金智--中国科学院微电子研究所

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于 2021-07-03 21:03:37 发布

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这篇博客概述了JinZhi等人关于InGaAs/InP双极晶体管（DHBT）的重要研究成果，包括高频率（高达305GHz）、高速设计、高击穿电压和表面复合机制的改进。研究者们详细介绍了基集结区设计、多指器件、高性能基结构的影响，以及如何通过优化减少表面复合来提升性能。

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[1] Jin Zhi, YB Su, et al. “Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz,” Solid-State Electronics , Vol. 52, 1088, 2008.

[2] Jin Zhi, Liu Xinyu, “On the design of base-collector junction of InGaAs/InP DHBT,” Science in China Series E: Technological Sciences, Vol. 52, 1672, 2009.

[3] Jin Zhi, Su Yongbo, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, “High Current Multi-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253 GHz,” Chin. Phys. Lett., Vol. 25, pp. 3075-3078, 2008.

[4] Jin Zhi, Su Yongbo, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, “High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft of 170 GHz and fmax of 253 GHz,” Chin. Phys. Lett., Vol. 25, pp. 2686-2689, 2008.

[5] Jin Zhi, Su Yongbo, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, “High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage,” Chin. Phys. Lett., Vol. 25, pp. 2683-2685, 2008.

[6] Jin Zhi, Liu Xinyu, Wener Prost, F.-J. Tegude, “Surface-recombination-free InGaAs/InP HBTs and the base contact recombination,” Solid-State Electronics, Vol. 52, pp. 1088-1091, 2008.

[7] Jin Zhi, W. Prost, S. Neumann, F.-J. Tegude, “Current transport mechanism and its effects on the performance of InP-based double heterojuction bipolar transistors with different base structures,” Applied Physics Letters, Vol. 84, 2910, 2004.

[8] Jin Zhi, S. Neumann, W. Prost, F.-J. Tegude, “Surface recombination mechanism in graded- base InGaAs/InP hetero- structure bipolar transistors,” IEEE Trans. Electron Devices, Vol. 51, 1044, 2004.