NP8205MR 20V Dual N-Channel Enhancement Mode MOSFET

Description

       The NP8205 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

General Features

VDS=20V,ID =4A

RDS(ON) =18mΩ (typical) @ VGS=4.5V

RDS(ON)=21.5mΩ (typical) @ VGS=2.5V

  High power and current handing capability

Lead free product is acquired

Surface mount package

Application

  Battery protection

  Load switch

  Power management

Package

  SOT23-6L