IMX900-AQR-C/IMX900-AMR-C 索尼图像传感器COMS

Diagonal 5.81 mm (Type 1/3.1) CMOS solid-state Image Sensor with Square Pixel for

Color and Monochrome Cameras

1. Description

The IMX900-AQR-C / IMX900-AMR-C is a diagonal 5.81mm (Type 1/3.1) CMOS active pixel type solid-state image

sensor with a square pixel array and 3.20 M effective pixels. This chip features a global shutter with variable charge

integration time. This chip operates with 2.9 V, 1.8 V, 0.8 V power supply. High sensitivity and low dark current

characteristics are achieved.

(Applications: FA cameras, Code reading cameras, Embedded vision systems)

2. Features

◆ CMOS active pixel type dots

◆ Built-in timing adjustment circuit, H/V driver and serial communication circuit

◆ Global shutter function

◆ Input frequency 24 MHz (only for CSI-2) / 37.125 MHz / 74.25 MHz / 54 MHz

◆ Number of recommended recording pixels: 2048 (H) × 1536 (V) approx. 3.14 M pixels

◆ Readout mode

All-pixel scan mode

Vertical / Horizontal 1/2 Subsampling mode

Vertical 1/10 Subsampling mode

2 x 2 average mode (Analog averaging within pixel) (Only Monochrome)

ROI mode

Vertical / Horizontal ‐ Normal / Inverted readout mode

◆ Readout rate

Maximum frame rate in

All-pixel scan mode: 8 bit 121.0 frame/s, 10 bit 113.4 frame/s, 12 bit 70.6 frame/s (Tentative)

(*) At high frame rates, control so as not to exceed Tj = +100 °C

◆ Variable-speed shutter function (resolution 1 H units)

◆ Pulse Output Function

The monitor output for Exposure period (GPO0, GPO1, GPO2)

◆ 8-bit / 10-bit / 12-bit A/D converter

◆ Conversion gain switching (HCG Mode / LCG Mode)

◆ CDS / PGA function

0 dB to 24 dB: Analog Gain (0.1 dB step)

24.1 dB to 48 dB: Analog Gain: 24 dB + Digital Gain: 0.1 dB to 24 dB (0.1 dB step)

◆ I/O interface

SLVS (2 ch / 4 ch) output

CSI-2 (1 Lane / 2 Lane / 4 Lane) output

Sony Semiconductor Solutions Corporation reserves the right to change products and specifications without prior notice.

This information does not convey any license by any implication or otherwise under any patents or other right.

Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony Semiconductor Solutions

Corporation cannot assume responsibility for any problems arising out of the use of these circuits.​​​​​​​

3. Device Structure

◆ CMOS image sensor

◆ Image size

Diagonal 5.81 mm (Type 1/3.1) Approx. 3.20 M pixels

◆ Total number of pixels

2064 (H) × 1592 (V)

Approx. 3.28 M pixels

◆ Number of effective pixels

2064 (H) × 1552 (V)

Approx. 3.20 M pixels

◆ Number of active pixels

2064 (H) × 1552 (V)

Approx. 3.20 M pixels

◆ Number of recommended recording pixels

2048 (H) × 1536 (V)

Approx. 3.14 M pixels

◆ Unit cell size

2.25 µm (H) × 2.25 µm (V)

◆ Optical black

Horizontal (H) direction: Front 0 pixels, rear 0 pixel

Vertical (V) direction: Front 40 pixels, rear 0 pixel

◆ Substrate material

Silicon