flash写入（三）

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//******************************************************************************
//  MSP430F552x Demo - Bank Erase from a Block while Executing Code from Another
//                    Block.
//
// 首先在Bank 1的0x10000到0x10100地址写入255个数据。在擦除过程中,闪烁P1.0，只能通过示波器看见
//  ACLK = REFO = 32kHz, MCLK = SMCLK = default DCO 1048576Hz
//  //* Set Breakpoint on NOP in the Mainloop to avoid Stressing Flash *//
//
//               MSP430F552x
//            -----------------
//        /|\|              XIN|-
//         | |                 |
//         --|RST          XOUT|-
//           |                 |
//           |             P1.0|- Oscilloscope
//
//   Bhargavi Nisarga
//   Texas Instruments Inc.
//   April 2009
//   Built with CCSv4 and IAR Embedded Workbench Version: 4.21
//******************************************************************************

#include <msp430.h>

// Function prototypes
void erase_Seg(void);
void wrt_Bank1(void);

char value;                                 // 8-bit value to write to Bank 1

int main(void)
{
  WDTCTL = WDTPW+WDTHOLD;                   // Stop WDT

  P1DIR |= 0x01;                            // P1.0输出
  while(1)
  {
    P1OUT &= ~ 0x01;                        // 输出P1.0拉低
    value = 0;                              // Loop forever, SET BREAKPOINT HERE
    wrt_Bank1();                            // 向Bank 1写入255个数据
    erase_Seg();                            // 调用擦除函数
    while(BUSY & FCTL3)                     // 检查擦除是否完成
    {
      P1OUT ^= 0x01;                        //  如果仍在擦除闪烁LED
    }                                       
  }
}

//------------------------------------------------------------------------------
// Erases Memory Bank 1
//------------------------------------------------------------------------------
void erase_Seg(void)
{
  char *Flash_ptr = (char *)0x10000;        // 初始化Flash指针
  FCTL3 = FWKEY;                            // Clear Lock bit
  FCTL1 = FWKEY+MERAS;                      // Set Bank Erase bit
  *Flash_ptr = 0;                           // Dummy erase byte
  FCTL3 = FWKEY+LOCK;                       // Set LOCK bit
}

//------------------------------------------------------------------------------
// Writes incremented Value to Bank 1
//------------------------------------------------------------------------------
void wrt_Bank1(void)
{
  unsigned int i;
  char *Flash_ptr = (char *)0x10000;        // 初始化Flash指针

  FCTL3 = FWKEY;                            // Clear Lock bit
  FCTL1 = FWKEY+WRT;                        // Set WRT bit for write operation
  for(i = 0; i < 256; i++)
  {
    *Flash_ptr++ = value++;                   // 写入255个word数据
  }
  FCTL1 = FWKEY;                            // Clear WRT bit
  FCTL3 = FWKEY+LOCK;                       // Set LOCK bit
}