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RSS订阅SiC Diodes - Silicon Carbide Design Rules.pdf
The close-to-ideal properties of novel silicon carbide Schottky diodes (thinQ!™), that can reach higher
blocking voltages than the actual Silicon Schottky limit of 250V, are well suited for hard switching
commutation. In order to maximize the benefit from these characteristics, a different design-i
2020-10-18
Slew rate control of discrete IGBT and CoolMOS.pdf
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2020-10-18
Infineon-PCIM_2014_Improving_Efficiency_in_AC_drives-ED-v1_0-en.pdf
New standard for the semiconductor losses measurement and efficiency improving
2020-10-18
pcim2013_SimulationbasedZthvsmeasurementanditseffectonLifetimeprediction.pdf
Simulation and VCE(T)-measurement based Zth are used to calculate the temperature in an
IGBT module after short circuit operations. Temperature gradient shows significant difference and only simulation based Zth agrees well with the short circuit test results
2020-10-18
实用温度测量---实用温度传感器应用
我们将重点介绍以下四种最常见的温度传感器：热电 偶、RTD、热敏电阻和集成电路传感器。尽管热电偶已 得到广泛应用，但却常被误用。因
此，我们将主要集中 介绍热电偶测量技术。
2020-10-18
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