c语言llx输出位数限制,CXK5V8512TM-85LLX

CXK5V8512TM

-85LLX/10LLX

65536-word

×

8-bit High Speed CMOS Static RAM

For the availability of this product, please contact the sales office.

Description

The CXK5V8512TM is a high speed CMOS static

RAM organized as 65536-words by 8-bits.

A

polysilicon

TFT

cell

technology

realized

extremely low stand-by current and higher data

retention stability.

Operating on a single 3.3V supply, and special

feature are low power consumption, high speed.

The CXK5V8512TM is a suitable RAM for portable

equipment with battery back up.

Features

•

Extended operating temperature range:

–25 to +85°C

•

Fast access time:

(Access time)

-85LLX

85ns (Max.)

-10LLX

100ns (Max.)

Low standby current:

14µA (Max.)

Low data retention current: 12µA (Max.)

Single 3.3V supply:

3.3V ± 0.3V

Low voltage data retention: 2.0V (Min.)

Package

8mm

×

20mm 32 pin TSOP package

A15

A13

A8

A11

A9

A7

A6

A5

A14

A12

32 pin TSOP (Plastic)

Block Diagram

Buffer

Row

Decoder

Memory

Matrix

1024

×

512

V

CC

GND

•

•

•

•

•

A4

A3

A10

A0

A2

A1

OE

Buffer

I/O Gate

Column

Decoder

Function

65536-word

×

8-bit static RAM

Structure

Silicon gate CMOS IC

Buffer

WE

CE1

CE2

I/O Buffer

I/O1

I/O8

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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E95716-PP