signature=204136a2a36a1d029186869b3c46b310,APS -2009 APS March Meeting - Event - Theoretical Study ...

研究者提出了一个理论模型,解释了一维碳纳米管场效应晶体管中高振幅、多陷阱随机电信号(RTS)的现象。他们观察到一种独特的RTS模式,电流在特定偏置窗口内受到强烈封锁,随后通过另一系列RTS逆转。这种行为归因于沿通道的多个电荷陷阱之间的静电相互作用。结果表明,在低维场效应器件中,多陷阱行为可能适用于新型晶体管和传感器技术。
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2009 APS March Meeting

Volume 54, Number 1

Monday–Friday, March 16–20, 2009;

Pittsburgh, Pennsylvania

Session A36: Carbon Nanotubes: Electrical Transport and Noise

8:00 AM–11:00 AM,

Monday, March 16, 2009

Room: 408

Sponsoring

Unit:

DMP

Chair: Hui Tang, Yale University,

Abstract ID: BAPS.2009.MAR.A36.6

Abstract: A36.00006 : Theoretical Study of Multiple-Trap Correlations in Random Telegraph Signals of a Carbon Nanotube Field-Effect Transistor

9:00 AM–9:12 AM

Authors:

Smitha Vasudevan

(University of Virginia)

Jack Chan

Brian Burke

Kenneth Evans

Kamil Walczak

Mingguo Liu

Joe Campbell

Keith Williams

Avik Ghosh

We develop a theoretical model to explain the observation of high amplitude,

multiple-trap random telegraph signatures (RTS) in the electronic transport

of a one-dimensional field effect transistor (FET) with a carbon nanotube

channel. A unique RTS pattern is observed, with an initial strong blockade

of the current that continues over a well-defined bias window, and

subsequent reversal of the blockade through a separate RTS series. We

ascribe our observations to correlated electrostatic effects between

multiple charge traps along the channel, whereby one trap 'passivates' the

other purely electrostatically and without any direct chemical bond. We

present a robust quantum transport model that provides quantitative

validation of this hypothesis. We assert that this effect, which has not

been reported in bulk silicon devices, arises from the logarithmic

electrostatic potential profile of the 1-D channel that allows the trap

levels to slip past each other under the action of a remote gate, ultimately

reversing their energy hierarchy and annihilating each other. Our results

suggest that multiple-trap behavior in low-dimensional field-effect devices

may be adaptable for several new transistor and sensor technologies.

To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2009.MAR.A36.6

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