解决STM8 IAR优化等级过高导致FLASH块编程失败的问题

STM8块编程的步骤为：
1、解锁FLASH权限
2、块编程
3、上锁FLASH权限
Note：如果你不是调用官方库函数对FLASH进行解锁，则要注意顺序，FLASH与EEPROM的解锁顺序是刚好相反的，解锁函数原型如下

/**
  * @brief   Unlocks the program or data EEPROM memory
  * @param  FLASH_MemType : Memory type to unlock
  *         This parameter can be a value of @ref FLASH_MemType_TypeDef
  * @retval None
  */
void FLASH_Unlock(FLASH_MemType_TypeDef FLASH_MemType)
{
    /* Check parameter */
    assert_param(IS_MEMORY_TYPE_OK(FLASH_MemType));

    /* Unlock program memory */
    if (FLASH_MemType == FLASH_MEMTYPE_PROG)
    {
        FLASH->PUKR = FLASH_RASS_KEY1;
        FLASH->PUKR = FLASH_RASS_KEY2;
    }
    /* Unlock data memory */
    else
    {
        FLASH->DUKR = FLASH_RASS_KEY2; /* Warning: keys are reversed on data memory !!! */
        FLASH->DUKR = FLASH_RASS_KEY1;
    }
}

STM8块编程官方库函数原型如下：

/**
  * @brief  Programs a memory block
  * @note   This function should be called and executed from RAM.
  * @param  FLASH_MemType : The type of memory to program
  * @param  BlockNum : The block number
  * @param  FLASH_ProgMode : The programming mode.
  * @param  Buffer : Pointer to buffer containing source data.
  * @retval None.
  */
IN_RAM(void FLASH_ProgramBlock(uint16_t BlockNum, FLASH_MemType_TypeDef FLASH_MemType, 
                        FLASH_ProgramMode_TypeDef FLASH_ProgMode, uint8_t *Buffer))
{
    uint16_t Count = 0;
    uint32_t startaddress = 0;

    /* Check parameters */
    assert_param(IS_MEMORY_TYPE_OK(FLASH_MemType));
    assert_param(IS_FLASH_PROGRAM_MODE_OK(FLASH_ProgMode));
    if (FLASH_MemType == FLASH_MEMTYPE_PROG)
    {
        assert_param(IS_FLASH_PROG_BLOCK_NUMBER_OK(BlockNum));
        startaddress = FLASH_PROG_START_PHYSICAL_ADDRESS;
    }
    else
    {
        assert_param(IS_FLASH_DATA_BLOCK_NUMBER_OK(BlockNum));
        startaddress = FLASH_DATA_START_PHYSICAL_ADDRESS;
    }

    /* Point to the first block address */
    startaddress = startaddress + ((uint32_t)BlockNum * FLASH_BLOCK_SIZE);

    /* Selection of Standard or Fast programming mode */
    if (FLASH_ProgMode == FLASH_PROGRAMMODE_STANDARD)
    {
        /* Standard programming mode */ /*No need in standard mode */
        FLASH->CR2 |= FLASH_CR2_PRG;
        FLASH->NCR2 &= (uint8_t)(~FLASH_NCR2_NPRG);
    }
    else
    {
        /* Fast programming mode */
        FLASH->CR2 |= FLASH_CR2_FPRG;
        FLASH->NCR2 &= (uint8_t)(~FLASH_NCR2_NFPRG);
    }

    /* Copy data bytes from RAM to FLASH memory */
    for (Count = 0; Count < FLASH_BLOCK_SIZE; Count++)
    {
#if defined (STM8S208) || defined(STM8S207) || defined(STM8S105) || defined (STM8AF62Ax) ||\
    defined (STM8AF52Ax) || defined (STM8AF626x)
  *((PointerAttr uint8_t*) (uint16_t)startaddress + Count) = ((uint8_t)(Buffer[Count]));
#elif defined (STM8S103) || defined (STM8S903)
  *((PointerAttr uint8_t*) (uint16_t)startaddress + Count) = ((uint8_t)(Buffer[Count]));
#endif       
    }
}

注意事项：如果调用官方块编程的库函数，默认是关闭的状态，所以你需要把IN_RAM改为开启状态，因为IN_RAM由 #define RAM_EXECUTION (0) 控制，把(0)改为(1)，然后重新编译即可。

回到正题！！！
如果你确保块编程的函数操作没有任何问题，逻辑都正确的情况下，程序跑到块编程执行烧写FLASH时，程序就卡死不动了，那就有可能是IAR优化等级过高导致的，博主实测优化等级开到HIGH高等级模式下，块编程操作失败，导致程序卡死。

如果你的程序空间不够，一定要开到最高优化等级，别担心，还有办法！！！
直接上代码

//写入一块数据
//选择不优化该函数，防止优化等级过高导致块编程失败卡死
#pragma optimize= none  
__ramfunc void STMFLASH_WriteBlock(u16 block,u8 *block_buff)
{
  uint8_t i;
  u32 addr;
  addr = block;
  addr *=BLOCK_BYTES;
  addr +=FLASH_PROG_START_PHYSICAL_ADDRESS;
  
  /* Unlock program memory */
  FLASH->PUKR = FLASH_RASS_KEY1;
  FLASH->PUKR = FLASH_RASS_KEY2;
        
  //Flash标准块编程:FLASH_NCR2_NPRG  快速块编程:FLASH_NCR2_NFPRG
  FLASH->CR2 |= FLASH_CR2_PRG;
  FLASH->NCR2 &= (uint8_t)(~FLASH_NCR2_NPRG); 

  for(i=0; i<BLOCK_BYTES; i++)
  {
    *((PointerAttr uint8_t*)(u32)addr + i) = (u8)block_buff[i];
  }
  while( (FLASH->IAPSR & (FLASH_IAPSR_EOP | FLASH_IAPSR_WR_PG_DIS)) == 0);
  
  /* Lock memory */
  FLASH->IAPSR &= (uint8_t)FLASH_MEMTYPE_PROG;
}

参考链接：
iar选择性优化函数模块设置