![image-20220823221757982](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823221757982.png)
![image-20220823221757982](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823221757982.png)
3.1 存储器概述
![image-20220823222033438](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823222033438.png)
3.1.1 存储器的层次结构
![image-20220823222044084](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823222044084.png)
3.1.2 存储器的分类(不同角度)
- 按层次分类
![image-20220823222112004](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823222112004.png)
- 按存储介质
![image-20220823222139268](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823222139268.png)
- 按存取方式
![image-20220823222214172](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823222214172.png)
- 按信息的可更改性
![image-20220823222227261](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823222227261.png)
- 按信息的可保存性
![image-20220823222246290](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823222246290.png)
3.1.3 存储器的性能指标
![image-20220823222256928](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823222256928.png)
![image-20220823222308969](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823222308969.png)
3.2 主存储器
3.2.3 主存储器的基本组成
![image-20220823231428861](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823231428861.png)
- 半导体元件的原理
![image-20220823231544961](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823231544961.png)
- 存储芯片的基本原理
![image-20220823231601965](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823231601965.png)
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![image-20220823231621370](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823231621370.png)
![image-20220823231716031](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823231716031.png)
![image-20220823231730760](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823231730760.png)
- 如何实现不同的寻址方式
![image-20220823231818363](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823231818363.png)
![image-20220823231832410](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823231832410.png)
![image-20220823231905628](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823231905628.png)
3.2.1 SRAM芯片和DRAM芯片
![image-20220823231949960](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220823231949960.png)
- 存储元件不同导致的特性差异
![image-20220824010924923](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220824010924923.png)
1、栅极电容VS双稳态触发器
![image-20220824011008761](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220824011008761.png)
![image-20220824011029813](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220824011029813.png)
![image-20220824011054356](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220824011054356.png)
![image-20220824011107285](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220824011107285.png)
![image-20220824011124876](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220824011124876.png)
- DRAM的刷新
![image-20220824011152313](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220824011152313.png)
为什么要用行列地址:
![image-20220824011227823](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220824011227823.png)
什么时候刷新:
![image-20220824011253983](https://xingqiu-tuchuang-1256524210.cos.ap-shanghai.myqcloud.com/6005/image-20220824011253983.png)
- DRAM的地址线复用技术