Nand flash OTP

NAND Flash的OTP区域一旦编程便无法擦除,可部分编程最多8次(主区4次,备用区4次)。已编程的部分不能覆盖写入,用户需谨慎处理地址,因为已编程位可能从1变为0,但0变为1则需要先进行擦除操作。OTP区域可以多次读取。访问OTP区域需要特定的入口命令,执行完OTP操作(编程或读取)后,无需额外入口命令即可连续操作。所有操作完成后,需使用OTP退出命令。
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Typical Nand flash OTP features:

  • The OTP area must be programmed once because it is impossible to be performed erase operation. And the OTP area
    can be partially programmed up to 8times(4 for main and 4 for spare) like main cell array.
  • When OTP area is partially programed by more than one time, the part of the page where had been programmed must
    not be over written, thus the user must be very careful about addressing. Because the programmed part may be changed
    from 1 to 0 but it may not be changed from 0 to 1 if the programmed part is programmed again without erase operation.
  • The OTP area can be read more than once.


Typical Read/Write Operations:

  • OTP entry commands are required to access OTP area.
  • Once the OTP entry commands are given, OTP operation (Program or Read) may be continuously executed
    without another extra OTP entry commands.
  • To exit OTP after all operations are finished, OTP exit command is required.
  • Vcc must be kept at operating voltage during operation.
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