MLC(Multi-Level-Cell)技术,由英特尔于1997年率先推出,能够让单个存储单元保存两倍的数据量。MLC内存颗粒是个相当良好的低价解决方案,可大幅节省制造商端的成本,但是MLC NAND颗粒制成的CompactFlash卡相较于SLC(Single-Lecel_Cell) 内存颗粒的产品有着写入速度慢、耗电多、寿命短的缺点,MLC颗粒制成的产品只有10X(1.5Mbyte/sec)的写入速度,SLC 颗粒制成的产品可以达到 22X(3.2Mbyte/sec)的写入速度。Intel 在1997年9月最先开发成功,能够让单个存储单元保存两倍的数据量;
SLC 与 MLC 的参数对比: Item SLC MLC
电压 3.3V/1.8V 3.3V
生产工艺 / 芯片尺寸 0.12um 0.16um
页容量 / 块容量 2KB/128KB 512KB/32KB or 2KB/256KB
访问时间(最大) 25us 70us
页编程时间(典 型) 250us 1.2ms
可否局部编程 Yes No
擦写次数 100K 10K
数据写入速率 8MB/S+ 1.5MB/S
二是看FLASH型号,如果是采用三星闪存、型号以K9G或K9L开头则是MLC,如果采用现代闪存HYUU或HYUV也是MLC
Brand | Cell | Page | Part Number | Capacity |
Samsung | SLC | Small Block | K9F1208U0M-Y,P | 64MB |
K9F1208U0A-Y,P | 64MB | |||
K9F1208U0A-V,F | 64MB | |||
K9F1208U0B-Y,P | 64MB | |||
K9F1208U0B-V,F | 64MB | |||
K9F1208U0A-YCB0 | 128MB | |||
K9K1G08U0M-Y | 128MB | |||
K9K1G08U0A-Y,P | 128MB | |||
K9K1G08U0A-V,F | 128MB | |||
K9T1G08U0M-Y,P | 128MB | |||
K9T1G08U0M-V,F | 128MB | |||
K9T1G08B0M-Y,P | 128MB | |||
K9T1G08B0M-V,F | 128MB | |||
K9E2G08U0M-Y,P | 256MB | |||
K9E2G08U0M-V,F | 256MB | |||
Large Block | K9F1G08U0M-Y,P | 128MB | ||
K9F1G08U0M-V,F | 128MB | |||
K9F1G08U0A-Y,P | 128MB | |||
K9F1G08U0A-V,F | 128MB | |||
K9F1G16U0M | 128MB | |||
K9K2G08U0M-Y,P | 256MB | |||
K9K2G08U0M-V,F | 256MB | |||
K9F2G08U0M-Y,P | 256MB | |||
K9K4G08U0M-Y,P | 512MB | |||
K9W8G08U1M-Y,P | 1GB | |||
K9F4G08U0M-Y,P | 512MB | |||
K9K8G08U0M-Y,P | 1GB | |||
K9F4G08U0A | 512MB | |||
K9K8G08U0A | 1GB | |||
K9WAG08U1M | 2GB | |||
MLC | Small Block | |||
Large Block | K9G4G08U0M-YCB0 | 512MB | ||
K9L8G08U0M-PCB0 | 1GB | |||
K9HAG08U1M-PCB0 | 2GB | |||
Toshiba | SLC | Small Block | TC58512FT | 64MB |
TC58DVM92A1FT | 64MB | |||
TH58100FT | 128MB | |||
TC58DVG02A1FT | 128MB | |||
TC58DVG04B1FTI0 | 128MB | |||
TC58DVG14B1FT00 | 256MB | |||
TC58DVG02A1FT00 | ||||
TC58DVG02A2FT00 | 128MB | |||
Large Block | TC58NVG0S3AFT | 128MB | ||
TH58NVG1S3AFT | 256MB | |||
TC58NVG1S3BFT00 | 256MB | |||
TH58NVG2S3BFT00 | 512MB | |||
MLC | Small Block | |||
Large Block | TC58NVG1D4BTG00 | 256MB | ||
TC58NVG2D4BTG00 | 512MB | |||
TH58NVG3D4BTG00 | 1GB | |||
TH58NVG4D4BTG20 | 2GB | |||
TC58NVG2D4BFT00 | 512MB | |||
TC58NVG3D4CTG00 | 1GB | |||
TC58NVG4D4CTG00 | 2GB | |||
Renasas | AG-AND | HN29V1G91T-30V | 128MB | |
Infineon | ||||
SanDisk | SLC | Large Block | SDTNGEHE0-1024 | 128MB |
SDTNGEFE0-2048 | 256MB | |||
MLC | Small Block | SDTNGCHE0-512 | 64MB | |
SDTNGCHE0-1024 | 128MB | |||
SDTNGCHE0-2048 | 256MB | |||
Hynix | SLC | Small Block | HY27US08121M-T,V | 64MB |
HY27UA081G1M-T,V | 128MB | |||
Large Block | HY27UF081G2M-T,V | 128MB | ||
HY27UF082G2M | 256MB | |||
HY27UG082G2M-T,V | 256MB | |||
HY27UG084G2M | 512MB | |||
HY27UH084G2M-T | 512MB | |||
HY27UF084G2M | 512MB | |||
HY27UG088G5M | 1GB | |||
HY27UH08AG5M | 2GB | |||
HY27UH088G2M | 1GB | |||
MLC | HY27UT084G2M | 512MB | ||
HY27UU088G5M | 1GB | |||
ST | SLC | Small Block | NAND128W3A | 16MB |
NAND256W3A | 32MB | |||
NAND512W3A | 64MB | |||
NAND01GW3A | 128MB | |||
Large Block | NAND512W3B | 64MB | ||
NAND01GW3B | 128MB | |||
NAND02GW3B2AN6 | 256MB | |||
NAND02GW3B2BN6 | 256MB | |||
NAND04DW3B | 512MB | |||
NAND08GW3B | 1024MB | |||
MLC | Small Block | |||
Large Block | ||||
Micron | SLC | Small Block | ||
Large Block | MT29F2G08AAB | 256MB | ||
MT29F4G08BAB | 512MB | |||
MT29F8G08FAB | 1GB | |||
MT29F2G08AAC | 256MB | |||
MT29F4G08AAA | 512MB | |||
MLC | Small Block | |||
Large Block |