2.27论文学习笔记

论文学习：Single Miller Capacitor Frequency Compensation Technique for Low-Power Multistage Amplifiers

该论文作者：Xiaohua Fan, Student Member, IEEE, Chinmaya Mishra, Student Member, IEEE, and
Edgar Sánchez-Sinencio, Fellow, IEEE
一、专业词汇
1.Op Amps:运算放大器
2.error amplifiers：误差放大器
3.load capacitance：负载电容。晶振：用石英晶体做的振荡器，一些电子产品需要频率非常稳定的交流信号，而LC振荡器稳定性较差，所以常采用晶体振荡器（简称晶振）
4.bypass capacitors：旁路电容
5.LDO regulator:低压差线性稳压器，就是输入输出之间的电压差很小
6.high-gain：高增益
7.low-power：低功耗
8.wide-bandwidth：宽频带
9.multistage： a.多级的
10.feedforward正反馈
11.Miller compensation capacitor密勒补偿电容
12. parasitic寄生的
13. calculation and simulation计算与仿真
14. scaling down按比例缩小
15. supply voltages电源电源
16. overview概述
17. nested Miller compensation嵌套式密勒补偿
18. drawback缺点
19. multipath多路的
20. pole-zero零极点
21. within the passband通带内
22. half-plane半平面
23. embedded tracking compensation嵌入式跟踪补偿
24.damping factor control frequency
compensation阻尼因子控制频率补偿
25.pole locations极点位置
26.pass transistor调整管

二、文章学习

Abstract—Due to the rising demand for low-power portable battery-operated electronic devices, there is an increasing need for low-voltage low-power low-drop-out (LDO) regulators.This provides motivation for research on high-gain wide-bandwidth amplifiers driving large capacitive loads.These amplifiers serve as error amplifiers in low-voltage LDO regulators.Two low-power efficient three-stage amplifier topologies suitable for large capacitive load applications are introduced here: single Miller capacitor compensation (SMC) and single Miller capacitor feedforward compensation (SMFFC).Using a single Miller compensation capacitor in three-stage amplifiers can significantly reduce the total capacitor value, and therefore, the overall area of the amplifiers
without influencing their stability. Pole-splitting and feedforward techniques are effectively combined to achieve better small-signal and large-signal performances.The 0.5- m CMOS amplifiers,SMC, and SMFFC driving a 25-kΩ//120-pF load achieve 4.6-MHz and 9-MHz gain-bandwidth product, respectively, each dissipates less than 0.42 mW of power with a 1-V power supply, and each occupies less than 0.02 mm2 of silicon area.
Index Terms—CMOS circuits,feedforward techniques, frequency compensation,multistage amplifier, single Miller compensation capacitor.

摘要——由于对低功率便携式的电池供电的电子设备的需求的增多，对于低电压、低功率、低压差线性稳压器（LDO）的需求也越来越多。于是人们开始对高增益宽频带放大器驱动大负载电容的研究有了动力，这些放大器在低电压的LDO稳压器中充当误差放大器的作用。下面介绍两个适用于大负载电容应用的低功率三级放大器：单级密勒补偿电容（SMC）和单级密勒正反馈电容（SMFFC）。在三级放大器中使用一个单级密勒补偿电容可以极大地减小总的电容值而且不会影响放大器的稳定性。极点分离和正反馈技术的结合可以更好的实现小信号和大信号的性能。0.5umCMOS放大器、单级密勒补偿电容（SMC）和单级密勒正反馈电容（SMFFC）驱动一个25kΩ、120pF的负载来分别在4.6MHz和9MHz的频带范围的产品中正常工作时，各自消耗了不到0.42mW的功率，而且每个占据不到0.02mm^2的硅。
关键词——CMOS电路，正反馈，频率补偿，多级放大器，单级密勒补偿电容

I. INTRODUCTION Large demand for low-power portable battery-operated electronic devices, such as mobile phones and laptop computers,provides the impetus for further research toward achieving higher on chip integration and lower power consumption.High-gain wide-bandwidth amplifiers driving large capacitive loads serve as error amplifiers in low-voltage low-drop-out (LDO) regulators [2], [3] in portable devices, as shown in Fig. 1.The pass transistor in [2], which is a PMOS transistor with
41 000- um/1- um size, serves as the load of the error amplifier.In a 0.5- um process, the parasitic capacitances of such a transistor was found out to be Cgs=84pF and Cgd=14pF with 1.2-V Vgs from calculation and simulation. This shows that the
total capacitance being driven by the error amplifier is large and is around 100 pF or more.
With the scaling down of device sizes and supply voltages, single-stage cascode or telescopic amplifiers are not suitable for high-gain wide-bandwidth amplifiers.A low-power low-area and frequency-compensated multistage amplifier capable of driving large capacitive loads is a necessity.Multistage amplifiers [4]–[10] require a robust frequency compensation scheme due to their potential closed-loop stability problems. To provide some background, Section II presents an overview of the existing frequency compensation techniques along with a brief review of nested Miller compensation (NMC). To provide some background, Section II presents an overview of the existing frequency compensation techniques along with a brief review of nested Miller compensation (NMC).A thorough mathematical analysis of the proposed techniques is presented in Section III, along with the principles of peration, stability conditions, and design issues. Section IV includes the design considerations and circuit implementations of the proposed topologies.The experimental results of the proposed topologies and comparisons among the existing techniques are included in Section V. Conclusions are given in Section VI.

对于像手机、电脑这样低功率便携式的电池供电的电子设备的大量需求，刺激了对实现高集成度和低功耗的深入研究。高增益宽频带放大器驱动大负载电容在低电压的LDO稳压器和便携式设备中充当误差放大器，如图1所示。图一中的调整管是一个充当误差放大器负载的PMOS晶体管。在0.5um工艺进程中，这样一个晶体管的寄生电容值在计算和仿真时是Cgs=84pF，Cgd=14pF，有着1.2V的栅源电压。这表明由误差放大器驱动的总的电容值很大，大约在100pF或者更多。随着元件尺寸、电压源按照比例缩小，单级共源共栅放大器和可伸缩的放大器不再适用于做高增益宽频带的放大器。于是有一个能驱动大的负载电容的低功耗、占据空间小能实现频率补偿的多级放大器是必要的。由于闭环稳定问题，多级放大器需要一个耐用的频率补偿方案。为了提供一些背景资料Section II展示了现有的频率补偿技术的简要概述和嵌套式密勒补偿（NMC）的简单回顾。Section III将展示提出的技术的数学分析以及操作原理、稳定条件和设计问题。Section IV包括设计考虑和提出的拓扑结构的电路实现。Section V是提出的拓扑结构的实验结果和现有的技术之间的比较。Section VI是结论。

第一次进行论文学习，如有错误之处请多多指点。