MC9S12XEP100RMV1数据手册中关于384KBPFLASH相关术语术语

术语表

1. Buffer RAM — The buffer RAM constitutes the volatile memory store required for EEE. Memory space
   in the buffer RAM not required for EEE can be partitioned to provide volatile memory space for
   applications
   缓冲RAM -缓冲RAM构成易失性存储器所需的EEE。EEE不需要的缓冲RAM中的内存空间可以被分区，为应用程序提供易失性内存空间。

2. Command Write Sequence — An MCU instruction sequence to execute built-in algorithms (including
   program and erase) on the Flash memory
   命令写入序列——在闪存上执行内置算法(包括程序和擦除)的MCU指令序列。

3. D-Flash Memory — The D-Flash memory constitutes the nonvolatile memory store required for EEE.
   Memory space in the D-Flash memory not required for EEE can be partitioned to provide nonvolatile
   memory space for applications.
   D-Flash存储器——D-Flash存储器构成了EEE所需要的非易失性存储器。
   EEE不需要的D-Flash内存中的内存空间可以被分区，为应用程序提供非易失性的内存空间。

4. D-Flash Sector — The D-Flash sector is the smallest portion of the D-Flash memory that can be erased.
   The D-Flash sector consists of four 64 byte rows for a total of 256 bytes.
   D-Flash扇区—D-Flash扇区是D-Flash中最小的可擦除区域。
   D-Flash扇区由四个64字节的行组成，总共256个字节。

5. EEE (Emulated EEPROM) — A method to emulate the small sector size features and endurance
   characteristics associated with an EEPROM.
   EEE(仿真EEPROM) -一种模拟与EEPROM相关联的小扇区尺寸特征和持久特性的方法。

6. EEE IFR — Nonvolatile information register located in the D-Flash block that contains data required to
   partition the D-Flash memory and buffer RAM for EEE. The EEE IFR is visible in the global memory map
   by setting the EEEIFRON bit in the MMCCTL1 register.
   EEE IFR -位于D-Flash块中的非易失性信息寄存器，该块包含为EEE划分D-Flash存储器和缓冲RAM所需的数据。通过设置MMCCTL1寄存器中的EEEIFRON位，EEEIFR在全局内存映射中是可见的。

7. NVM Command Mode — An NVM mode using the CPU to setup the FCCOB register to pass parameters
   required for Flash command execution.
   NVM命令模式——一种NVM模式，通过CPU设置FCCOB寄存器来传递执行Flash命令所需的参数。

8. Phrase — An aligned group of four 16-bit words within the P-Flash memory. Each phrase includes eight
   ECC bits for single bit fault correction and double bit fault detection within the phrase.
   短语-在P-Flash存储器内由四个16位字组成的对齐组。每个短语包括八个词
   用于单位故障纠正和双位故障检测的ECC位内的短语。

9. P-Flash Memory — The P-Flash memory constitutes the main nonvolatile memory store for applications.
   P-Flash存储器——P-Flash存储器构成应用程序的主要非易失性存储器。

10. P-Flash Sector — The P-Flash sector is the smallest portion of the P-Flash memory that can be erased.
    Each P-Flash sector contains 1024 bytes.
    P-Flash扇区—P-Flash扇区是P-Flash中最小的可以被擦除的部分。
    每个P-Flash扇区大小为1024字节。

11. Program IFR — Nonvolatile information register located in the P-Flash block that contains the Device
    ID, Version ID, and the Program Once field. The Program IFR is visible in the global memory map by
    setting the PGMIFRON bit in the MMCCTL1 register.
    程序IFR -位于包含设备的P-Flash块中的非易失性信息寄存器
    ID、版本ID和程序一次字段。通过设置MMCCTL1寄存器中的PGMIFRON位，程序IFR在全局内存映射中是可见的。

PFLASH特性

1. 384 Kbytes of P-Flash memory composed of one 256 Kbyte Flash block and one 128 Kbyte Flash
   block. The 256 Kbyte Flash block consists of two 128 Kbyte sections each divided into 128 sectors
   of 1024 bytes. The 128 Kbyte Flash block is divided into 128 sectors of 1024 bytes.

   384 Kbyte的P-Flash存储器，由一个256kbyte的Flash块和一个128kbyte的Flash块组成。256kbyte的闪存块由两个128kbyte的部分组成，每个部分分为1024字节的128个扇区。128kbyte的Flash块划分为128个扇区，每个扇区的大小为1024字节。

2. Ability to program up to one phrase in each P-Flash block simultaneously

   能够在每个P-Flash块同时编程至多一个短语

3. Flexible protection scheme to prevent accidental program or erase of P-Flash memory

   灵活的保护方案，防止意外程序或擦除P-Flash存储器

4. Single bit fault correction and double bit fault detection within a 64-bit phrase during read
   operations

   读操作时，64位短语内的单位故障纠正和双位故障检测

5. Automated program and erase algorithm with verify and generation of ECC parity bits

   自动程序和擦除算法与校验和产生的ECC奇偶位

6. Fast sector erase and phrase program operation

   快速扇区擦除和短语程序操作

DFLASH特性

1. Up to 32 Kbytes of D-Flash memory with 256 byte sectors for user access

   高达32kbytes的D-Flash存储器，256字节扇区供用户访问

2. Dedicated commands to control access to the D-Flash memory over EEE operation

   控制对DFLASH内存访问的专用命令是通过EEE操作进行的

3. Ability to program up to four words in a burst sequence

   在一个突发序列能够编程多达4个字

4. Single bit fault correction and double bit fault detection within a word during read operations

   读操作时，字内的单位故障纠正和双位故障检测

5. Automated program and erase algorithm with verify and generation of ECC parity bits

   自动程序和擦除算法与校验和产生的ECC奇偶位

6. Fast sector erase and word program operation

   快速扇区擦除和文字程序操作

模拟EEPROM特性

1. Up to 4 Kbytes of emulated EEPROM (EEE) accessible as 4 Kbytes of RAM

   多达4千字节的仿真EEPROM (EEE)可作为4千字节的RAM访问

2. Flexible protection scheme to prevent accidental program or erase of data

   灵活的保护方案，防止意外程序或删除数据

3. Automatic EEE file handling using an internal Memory Controller

   使用内部内存控制器自动处理EEE文件

4. Automatic transfer of valid EEE data from D-Flash memory to buffer RAM on reset

   在复位时，有效的EEE数据从D-Flash存储器自动转移到缓冲区RAM

5. Ability to monitor the number of outstanding EEE related buffer RAM words left to be
   programmed into D-Flash memory

   能够监控剩下的待编程到D-Flash存储器中的与EEE相关的缓冲RAM字的数量

6. Ability to disable EEE operation and allow priority access to the D-Flash memory

   能够禁用EEE操作，并允许优先访问D-Flash存储器

7. Ability to cancel all pending EEE operations and allow priority access to the D-Flash memory

   能够取消所有暂挂的EEE操作，并允许优先访问D-Flash存储器

User Buffer RAM 特性

1. Up to 4 Kbytes of RAM for user access

   高达4千兆字节的RAM供用户访问