BSIM4 MOSFET Model

Nonlinear Devices >Chapter 5: Devices and Models, MOS  Print version of this Book (PDF file)
BSIM4_Model (BSIM4 MOSFET Model) Symbol Available in    ADS and RFDE Supported via model include file in RFDE Parameters Name  Description  Units  Default  NMOS model type: yes, no yes PMOS model type: yes, no no Capmod Capacitance model selector 2 Diomod Diode IV model selector 1 Rdsmod Bias-dependent S/D resistance model selector 0 Trnqsmod Transient NQS model selector 0 Acnqsmod AC NQS model selector 0 Mobmod Mobility model selector 0 Rbodymod Distributed body R model selector 0 Rgatemod Gate R model selector 0 Permod Pd and Ps model selector 1 Geomod Geometry dependent parasitics model selector 0 Fnoimod Flicker noise model selector 1 Tnoimod Thermal noise model selector 0 Igcmod Gate-to-channel Ig model selector 0 Igbmod Gate-to-body Ig model selector 0 Tempmod Temperature model selector 0 Paramchk Model parameter checking selector 1 Binunit Bin unit selector 1 Version Parameter for model version 4.40 Toxe Electrical gate oxide thickness in meters 30.0e-10 Toxp Physical gate oxide thickness in meters Toxe Toxm Gate oxide thickness at which parameters are extracted Toxe Toxref Target Tox value 30.0e-10 Dtox Defined as (Toxe - Toxp) 0.0 Epsrox Dielectric constant of the gate oxide relative to vacuum 3.9 Cdsc Drain/Source and channel coupling capacitance F/(V*m2) 2.4e-4 Cdscb Body-bias dependence of Cdsc F/(V*m2) 0.0 Cdscd Drain-bias dependence of Cdsc F/(V*m2) 0.0 Cit Interface state capacitance F/(V*m2) 0.0 Nfactor Subthreshold swing coefficient 1.0 Xj Junction depth m 1.5e-7 Vsat Saturation velocity at Tnom m/s 8.0e4 At Temperature coefficient of Vsat m/s 3.3e4 A0 Non-uniform depletion width effect coefficient 1.0 Ags Gate bias coefficient of Abulk V-1 0.0 A1 First non-saturation effect coefficient V-1 0.0 A2 Second non-saturation effect coefficient 1.0 Keta Body-bias coefficient of non-uniform depletion width effect V-1 -0.047 Nsub Substrate doping concentration cm-3 6.0e16 Ndep Channel doping concentration at the depletion edge cm-3 1.7e17 Nsd S/D doping concentration cm-3 1.0e20 Phin Adjusting parameter for surface potential due to non-uniform vertical doping V 0.0 Ngate Poly-gate doping concentration cm-3 0.0 Gamma1 Vth body coefficient V1/2 calculated Gamma2 Vth body coefficient V1/2 calculated Vbx Vth transition body voltage V calculated Vbm Maximum body voltage V -3.0 Xt Doping depth m 1.55e-7 K1 Bulk effect coefficient 1 V1/2 0.5 Kt1 Temperature coefficient of Vth V -0.11 Kt1l Temperature coefficient of Vth V*m 0.0 Kt2 Body coefficient of Kt1 K2 Bulk effect coefficient 2 0.0 K3 Narrow width effect coefficient 80.0 K3b Body effect coefficient of K3 V-1 0.0 W0 Narrow width effect parameter m 2.5e-6 Dvtp0 First parameter for Vth shift due to pocket m 0.0 Dvtp1 Second parameter for Vth shift due to pocket V-1 0.0 Lpe0 Equivalent length of pocket region at zero bias m 1.74e-7 Lpeb Equivalent length of pocket region accounting for body bias m 0.0 Dvt0 Short channel effect coefficient 0 2.2 Dvt1 Short channel effect coefficient 1 0.53 Dvt2 Short channel effect coefficient 2 V-1 -0.032 Dvt0w Narrow Width coefficient 0 0.0 Dvt1w Narrow Width effect coefficient 1 m-1 5.3e6 Dvt2w Narrow Width effect coefficient 2 V-1 -0.032 Drout DIBL coefficient of output resistance 0.56 Dsub DIBL coefficient in the subthreshold region fixed by Drout Vth0 (Vtho) Threshold voltage V 0.7 (NMOS) -0.7 (PMOS) Ua Linear gate dependence of mobility 1.0e-15 (Mobmod 2) 1.0e-9  (Mobmod 0, 1) Ua1 Temperature coefficient of Ua m/V 1.0e-9 Ub Quadratic gate dependence of mobility (m/V2) 1.0e-19 Ub1 Temperature coefficient of Ub (m/V2) 1.0e-18 Uc Body-bias dependence of mobility V-1 -0.0465 (Mobmod 1) -0.0465e-9  (Mobmod 0, 2) Uc1 Temperature coefficient of Uc V-1 -0.056 (Mobmod 1) -0.056e-9  (Mobmod 0, 2) U0 Low-field mobility at Tnom m2/(V*s) 0.0677 (NMOS) -0.025 (PMOS) Eu Mobility exponent 1.67 (NMOS) 1.0 (PMOS) Ute Temperature coefficient of mobility -1.5 Voff Threshold voltage offset V -0.08 Minv Fitting parameter for moderate inversion in Vgsteff 0.0 Voffl Length dependence parameter for Vth offset V*m 0.0 Tnom Parameter measurement temperature °C 25 Trise temperature rise above ambient °C 0 Cgso Gate-source overlap capacitance per width F/m calculated Cgdo Gate-drain overlap capacitance per width F/m calculated Cgbo Gate-bulk overlap capacitance per length F/m 0.0 Xpart Channel charge partitioning 0.0 Delta Effective Vds parameter V 0.01 Rsh Source-drain sheet resistance ohms/sq 0.0 Rdsw Source-drain resistance per width ohms*um 200.0 Rdswmin Source-drain resistance per width at high Vg ohms*um 0.0 Rsw Source resistance per width ohms*um 100.0 Rdw Drain resistance per width ohms*um 100.0 Rdwmin Drain resistance per width at high Vg ohms*um 0.0 Rswmin Source resistance per width at high Vg ohms*um 0.0 Prwg Gate-bias effect on parasitic resistance  V-1 1.0 Prwb Body-effect on parasitic resistance  V-1/2 0.0 Prt Temperature coefficient of parasitic resistance  ohms*um 0.0 Eta0 Subthreshold region DIBL coefficient 0.08 Etab Subthreshold region DIBL coefficient V-1 -0.07 Pclm Channel length modulation coefficient 1.3 Pdiblc1 Drain-induced barrier lowering coefficient 0.39 Pdiblc2 Drain-induced barrier lowering coefficient 0.0086 Pdiblcb Body-effect on drain-induced barrier lowering V-1 0.0 Fprout Rout degradation coefficient for pocket devices V/m1/2 0.0 Pdits Coefficient for drain-induced Vth shifts V-1 0.0 Pditsl Length dependence of drain-induced Vth shifts m-1 0.0 Pditsd Vds dependence of drain-induced Vth shifts V-1 0.0 Pscbe1 Substrate current body-effect coefficient V/m 4.24e8 Pscbe2 Substrate current body-effect coefficient m/V 1.0e-5 Pvag Gate dependence of output resistance parameter 0.0 Jss Bottom source junction reverse saturation current density A/m2 1.0e-4 Jsws Isolation edge sidewall source junction reverse saturation current density A/m 0.0 Jswgs Gate edge source junction reverse saturation current density A/m 0.0 Pbs Source junction built-in potential V 1.0 Njs Source junction emission coefficient 1.0 Xtis Source junction current temperature exponent 3.0 Mjs Source bottom junction capacitance grading coefficient 0.5 Pbsws Source sidewall junction capacitance built-in potential V 1.0 Mjsws Source sidewall junction capacitance grading coefficient 0.33 Pbswgs Source gate side sidewall junction capacitance built-in potential V Pbsws Mjswgs Source gate side sidewall junction capacitance grading coefficient Mjsws Cjs Source bottom junction capacitance per unit area F/m2 5.0e-4 Cjsws Source sidewall junction capacitance per unit periphery F/m 5.0e-10 Cjswgs Source gate side sidewall junction capacitance per unit width F/m Cjsws Jsd Bottom drain junction reverse saturation current density A/m2 Jss Jswd Isolation edge sidewall drain junction reverse saturation current density A/m Jsws Jswgd Gate edge drain junction reverse saturation current density Jswgs Pbd Drain junction built-in potential V Pbs Njd Drain junction emission coefficient Njs Xtid Drain junction current temperature exponent Xtis Mjd Drain bottom junction capacitance grading coefficient Mjs Pbswd Drain sidewall junction capacitance built-in potential V Pbsws Mjswd Drain sidewall junction capacitance grading coefficient Mjsws Pbswgd Drain gate side sidewall junction capacitance built-in potential V Pbswgs Mjswgd Drain gate side sidewall junction capacitance grading coefficient Mjswgs Cjd Drain bottom junction capacitance per unit area F/m2 Cjs Cjswd Drain sidewall junction capacitance per unit periphery F/m Cjsws Cjswgd Drain gate side sidewall junction capacitance per unit width F/m Cjswg Vfbcv Flat Band Voltage parameter for capmod V -1.0 Vfb Flat Band Voltage V -1.0 Tpb Temperature coefficient of pb V/K 0.0 Tcj Temperature coefficient of cj K-1 0.0 Tpbsw Temperature coefficient of pbsw V/K 0.0 Tcjsw Temperature coefficient of cjsw K-1 0.0 Tpbswg Temperature coefficient of pbswg V/K 0.0 Tcjswg Temperature coefficient of cjswg K-1 0.0 Acde Exponential coefficient for finite charge thickness m/V 1.0 Moin Coefficient for gate-bias dependent surface potential 15.0 Noff C-V turn-on/off parameter 1.0 Voffcv C-V lateral-shift parameter V 0.0 Dmcg Distance of Mid-Contact to Gate edge m 0.0 Dmci Distance of Mid-Contact to Isolation m Dmcg Dmdg Distance of Mid-Diffusion to Gate edge m 0.0 Dmcgt Distance of Mid-Contact to Gate edge in Test structures m 0.0 Xgw Distance from gate contact center to device edge m 0.0 Xgl Variation in Ldrawn m 0.0 Rshg Gate sheet resistance ohms/sq 0.1 Ngcon Number of gate contacts 1.0 Xrcrg1 First fitting parameter the bias-dependent Rg 12.0 Xrcrg2 Second fitting parameter the bias-dependent Rg 1.0 Xw W offset for channel width due to mask/etch effect m Xl L offset for channel width due to mask/etch effect m Lambda  Velocity overshoot parameter m^3/(V*s) 0.0 Vtl Thermal velocity m/s 2.0e5 Lc Velocity back scattering parameter m 5.0e-9 Xn Velocity back scattering coefficient 3.0 Vfbsdoff S/D flatband voltage offset V 0.0 Lintnoi Lint offset for noise calculation m 0.0 Lint Length reduction parameter m 0.0 Ll Length reduction parameter m 0.0 Llc Length reduction parameter for CV m 0.0 Lln Length reduction parameter 0.0 Lw Length reduction parameter m 0.0 Lwc Length reduction parameter for CV m Lw Lwn Length reduction parameter 1.0 Lwl Length reduction parameter m 0.0 Lwlc Length reduction parameter for CV m Lwl Lmin Minimum length for the model m 0.0 Lmax Maximum length for the model m 1.0 Wr Width dependence of rds 1.0 Wint Width reduction parameter m 0.0 Dwg Width reduction parameter m/V 0.0 Dwb Width reduction parameter m/V1/2 0.0 Wl Width reduction parameter m 0.0 Wlc Width reduction parameter for CV m Wl Wln Width reduction parameter 1.0 Ww Width reduction parameter m 0.0 Wwc Width reduction parameter for CV m Ww Wwn Width reduction parameter 1.0 Wwl Width reduction parameter m 0.0 Wwlc Width reduction parameter for CV m Wwl Wmin Minimum width for the model m 0.0 Wmax Maximum width for the model m 1.0 B0 A bulk narrow width parameter m 0.0 B1 A bulk narrow width parameter m 0.0 Cgsl New C-V model parameter F/m 0.0 Cgdl New C-V model parameter F/m 0.0 Ckappas S/G overlap C-V parameter  V 0.6 Ckappad D/G overlap C-V parameter V Ckappas Cf Fringe capacitance parameter F/m calculated Clc Vdsat parameter for C-V model m 1.0e-7 Cle Vdsat parameter for C-V model 0.6 Dwc Delta W for C-V model m Wint Dlc Delta L for C-V model m Lint Dlcig Delta L for Ig model m Lint Dwj Delta W for S/D junctions Dwc Alpha0 substrate current model parameter A*m/V 0.0 Alpha1 substrate current model parameter A/V 0.0 Beta0 substrate current model parameter V 30.0 Agidl Pre-exponential constant for GIDL Ohm-1 0.0 Bgidl Exponential constant for GIDL V/m 2.3e9 Cgidl Parameter for body-bias dependence of GIDL V3 0.5 Egidl Fitting parameter for bandbending V 0.8 Aigc Parameter for Igc 0.43 (NMOS) 0.31 (PMOS) Bigc Parameter for Igc 0.054 (NMOS) 0.024 (PMOS) Cigc Parameter for Igc V-1 0.075 (NMOS) 0.03 (PMOS) Aigsd Parameter for Igs,d 0.043 (NMOS) 0.31 (PMOS) Bigsd Parameter for Igs,d 0.054 (NMOS) 0.024 (PMOS) Cigsd Parameter for Igs,d V-1 0.075 (NMOS) 0.03 (PMOS) Aigbacc Parameter for Igb 0.43 Bigbacc Parameter for Igb 0.054 Cigbacc Parameter for Igb V-1 0.075 Aigbinv Parameter for Igb 0.35 Bigbinv Parameter for Igb 0.03 Cigbinv Parameter for Igb V-1 0.006 Nigc Parameter for Igc slope 1.0 Nigbinv Parameter for Igbinv slope 3.0 Nigbacc Parameter for Igbacc slope 1.0 Ntox Exponent for Tox ratio 1.0 Eigbinv Parameter for the Si bandgap for Igbinv V 1.1 Pigcd Parameter for Igc partition 1.0 Poxedge Factor for the gate edge Tox 1.0 Ijthdfwd Forward drain diode forward limiting current A Ijthsfwd Ijthsfwd Forward source diode forward limiting current A 0.1 Ijthdrev Reverse drain diode forward limiting current A Ijthsrev Ijthsrev Reverse source diode forward limiting current A 0.1 Imelt (similar to Ijth*; refer to Note 12 on Imelt, Ijth, Ijthdfwd, Ijthsfwd, Ijthdrev, Ijthsrev) A Ijthsfwd Xjbvd Fitting parameter for drain diode breakdown current Xjbvs Xjbvs Fitting parameter for source diode breakdown current 1.0 Bvd Drain diode breakdown voltage V Bvs Bvs Source diode breakdown voltage V 10.0 Gbmin Minimum body conductance ohm-1 1.0e-12 Jtss Source bottom trap-assisted saturation current density 0.0 Jtsd Drain bottom trap-assisted saturation current density 0.0 Jtssws Source STI sidewall trap-assisted saturation current density 0.0 Jtsswd Drain STI sidewall trap-assisted saturation current density 0.0 Jtsswgs Source gate-edge sidewall trap-assisted saturation current density 0.0 Jtsswgd Drain gate-edge sidewall trap-assisted saturation current density 0.0 Njts Non-ideality factor for bottom junction 20.0 Njtssw Non-ideality factor for STI sidewall junction 20.0 Njtsswg Non-ideality factor for gate-edge sidewall junction 20.0 Xtss Power dependence of Jtss on temperature 0.02 Xtsd Power dependence of Jtsd on temperature 0.02 Xtssws Power dependence of Jtssws on temperature 0.02 Xtsswd Power dependence of Jtsswd on temperature 0.02 Xtsswgs Power dependence of Jtsswgs on temperature 0.02 Xtsswgd Power dependence of Jtsswgd on temperature 0.02 Tnjts Temperature coefficient for Njts 0.0 Tnjtssw Temperature coefficient for Njtssw 0.0 Tnjtsswg Temperature coefficient for Njtsswg 0.0 Vtss Source bottom trap-assisted voltage dependent parameter 10.0 Vtsd Drain bottom trap-assisted voltage dependent parameter 10.0 Vtssws Source STI sidewall trap-assisted voltage dependent parameter 10.0 Vtsswd Drain STI sidewall trap-assisted voltage dependent parameter 10.0 Vtsswgs Source gate-edge sidewall trap-assisted voltage dependent parameter 10.0 Vtsswgd Drain gate-edge sidewall trap-assisted voltage dependent parameter 10.0 Rbdb Resistance between bNode and dbNode ohms 50.0 Rbpb Resistance between bNodePrime and bNode ohms 50.0 Rbsb Resistance between bNode and sbNode ohms 50.0 Rbps Resistance between bNodePrime and sbNode ohms 50.0 Rbpd Resistance between bNodePrime and bNode ohms 50.0 Lcdsc Length dependence of cdsc 0.0 Lcdscb Length dependence of cdscb 0.0 Lcdscd Length dependence of cdscd 0.0 Lcit Length dependence of cit 0.0 Lnfactor Length dependence of nfactor 0.0 Lxj Length dependence of xj 0.0 Lvsat Length dependence of vsat 0.0 Lat Length dependence of at 0.0 La0 Length dependence of a0 0.0 Lags Length dependence of ags 0.0 La1 Length dependence of a1 0.0 La2 Length dependence of a2 0.0 Lketa Length dependence of keta 0.0 Lnsub Length dependence of nsub 0.0 Lndep Length dependence of ndep 0.0 Lnsd Length dependence of nsd 0.0 Lphin Length dependence of phin 0.0 Lngate Length dependence of ngate 0.0 Lgamma1 Length dependence of gamma1 0.0 Lgamma2 Length dependence of gamma2 0.0 Lvbx Length dependence of vbx 0.0 Lvbm Length dependence of vbm 0.0 Lxt Length dependence of xt 0.0 Lk1 Length dependence of k1 0.0 Lkt1 Length dependence of kt1 0.0 Lkt1l Length dependence of kt1l 0.0 Lkt2 Length dependence of kt2 0.0 Lk2 Length dependence of k2 0.0 Lk3 Length dependence of k3 0.0 Lk3b Length dependence of k3b 0.0 Lw0 Length dependence of w0 0.0 Ldvtp0 Length dependence of dvtp0 0.0 Ldvtp1 Length dependence of dvtp1 0.0 Llpe0 Length dependence of lpe0 0.0 Llpeb Length dependence of lpeb 0.0 Ldvt0 Length dependence of dvt0 0.0 Ldvt1 Length dependence of dvt1 0.0 Ldvt2 Length dependence of dvt2 0.0 Ldvt0w Length dependence of dvt0w 0.0 Ldvt1w Length dependence of dvt1w 0.0 Ldvt2w Length dependence of dvt2w 0.0 Ldrout Length dependence of drout 0.0 Ldsub Length dependence of dsub 0.0 Lvth0 (Lvtho) Length dependence of vto 0.0 Lua Length dependence of ua 0.0 Lua1 Length dependence of ua1 0.0 Lub Length dependence of ub 0.0 Lub1 Length dependence of ub1 0.0 Luc Length dependence of uc 0.0 Luc1 Length dependence of uc1 0.0 Lu0 Length dependence of u0 0.0 Lute Length dependence of ute 0.0 Lvoff Length dependence of voff 0.0 Lminv Length dependence of minv 0.0 Ldelta Length dependence of delta 0.0 Lrdsw Length dependence of rdsw  0.0 Lrsw Length dependence of rsw 0.0 Lrdw Length dependence of rdw 0.0 Lprwg Length dependence of prwg  0.0 Lprwb Length dependence of prwb  0.0 Lprt Length dependence of prt  0.0 Leta0 Length dependence of eta0 0.0 Letab Length dependence of etab 0.0 Lpclm Length dependence of pclm 0.0 Lpdiblc1 Length dependence of pdiblc1 0.0 Lpdiblc2 Length dependence of pdiblc2 0.0 Lpdiblcb Length dependence of pdiblcb 0.0 Lfprout Length dependence of pdiblcb 0.0 Lpdits Length dependence of pdits 0.0 Lpditsd Length dependence of pditsd 0.0 Lpscbe1 Length dependence of pscbe1 0.0 Lpscbe2 Length dependence of pscbe2 0.0 Lpvag Length dependence of pvag 0.0 Lwr Length dependence of wr 0.0 Ldwg Length dependence of dwg 0.0 Ldwb Length dependence of dwb 0.0 Lb0 Length dependence of b0 0.0 Lb1 Length dependence of b1 0.0 Lcgsl Length dependence of cgsl 0.0 Lcgdl Length dependence of cgdl 0.0 Lckappas Length dependence of ckappas 0.0 Lckappad Length dependence of ckappad 0.0 Lcf Length dependence of cf 0.0 Lclc Length dependence of clc 0.0 Lcle Length dependence of cle 0.0 Lalpha0 Length dependence of alpha0 0.0 Lalpha1 Length dependence of alpha1 0.0 Lbeta0 Length dependence of beta0 0.0 Lagidl Length dependence of agidl 0.0 Lbgidl Length dependence of bgidl 0.0 Lcgidl Length dependence of cgidl 0.0 Legidl Length dependence of egidl 0.0 Laigc Length dependence of aigc 0.0 Lbigc Length dependence of bigc 0.0 Lcigc Length dependence of cigc 0.0 Laigsd Length dependence of aigsd 0.0 Lbigsd Length dependence of bigsd 0.0 Lcigsd Length dependence of cigsd 0.0 Laigbacc Length dependence of aigbacc 0.0 Lbigbacc Length dependence of bigbacc 0.0 Lcigbacc Length dependence of cigbacc 0.0 Laigbinv Length dependence of aigbinv 0.0 Lbigbinv Length dependence of bigbinv 0.0 Lcigbinv Length dependence of cigbinv 0.0 Lnigc Length dependence of nigc 0.0 Lnigbinv Length dependence of nigbinv 0.0 Lnigbacc Length dependence of nigbacc 0.0 Lntox Length dependence of ntox 0.0 Leigbinv Length dependence for eigbinv 0.0 Lpigcd Length dependence for pigcd 0.0 Lpoxedge Length dependence for poxedge 0.0 Lvfbcv Length dependence of vfbcv 0.0 Lvfb Length dependence of vfb 0.0 Lacde Length dependence of acde 0.0 Lmoin Length dependence of moin 0.0 Lnoff Length dependence of noff 0.0 Lvoffcv Length dependence of voffcv 0.0 Lxrcrg1 Length dependence of xrcrg1 0.0 Lxrcrg2 Length dependence of xrcrg2 0.0 Llambda Length dependence of Lambda 0.0 Lvtl Length dependence of Vtl 0.0 Lxn Length dependence of Xn 0.0 Leu Length dependence of eu 0.0 Lvfbsdoff Length dependence of Vfbsdoff 0.0 Wcdsc Width dependence of cdsc 0.0 Wcdscb Width dependence of cdscb 0.0 Wcdscd Width dependence of cdscd 0.0 Wcit Width dependence of cit 0.0 Wnfactor Width dependence of nfactor 0.0 Wxj Width dependence of xj 0.0 Wvsat Width dependence of vsat 0.0 Wat Width dependence of at 0.0 Wa0 Width dependence of a0 0.0 Wags Width dependence of ags 0.0 Wa1 Width dependence of a1 0.0 Wa2 Width dependence of a2 0.0 Wketa Width dependence of keta 0.0 Wnsub Width dependence of nsub 0.0 Wndep Width dependence of ndep 0.0 Wnsd Width dependence of nsd 0.0 Wphin Width dependence of phin 0.0 Wngate Width dependence of ngate 0.0 Wgamma1 Width dependence of gamma1 0.0 Wgamma2 Width dependence of gamma2 0.0 Wvbx Width dependence of vbx 0.0 Wvbm Width dependence of vbm 0.0 Wxt Width dependence of xt 0.0 Wk1 Width dependence of k1 0.0 Wkt1 Width dependence of kt1 0.0 Wkt1l Width dependence of kt1l 0.0 Wkt2 Width dependence of kt2 0.0 Wk2 Width dependence of k2 0.0 Wk3 Width dependence of k3 0.0 Wk3b Width dependence of k3b 0.0 Ww0 Width dependence of w0 0.0 Wdvtp0 Width dependence of dvtp0 0.0 Wdvtp1 Width dependence of dvtp1 0.0 Wlpe0 Width dependence of lpe0 0.0 Wlpeb Width dependence of lpeb 0.0 Wdvt0 Width dependence of dvt0 0.0 Wdvt1 Width dependence of dvt1 0.0 Wdvt2 Width dependence of dvt2 0.0 Wdvt0w Width dependence of dvt0w 0.0 Wdvt1w Width dependence of dvt1w 0.0 Wdvt2w Width dependence of dvt2w 0.0 Wdrout Width dependence of drout 0.0 Wdsub Width dependence of dsub 0.0 Wvth0 (Wvtho) Width dependence of vto 0.0 Wua Width dependence of ua 0.0 Wua1 Width dependence of ua1 0.0 Wub Width dependence of ub 0.0 Wub1 Width dependence of ub1 0.0 Wuc Width dependence of uc 0.0 Wuc1 Width dependence of uc1 0.0 Wu0 Width dependence of u0 0.0 Wute Width dependence of ute 0.0 Wvoff Width dependence of voff 0.0 Wminv Width dependence of minv 0.0 Wdelta Width dependence of delta 0.0 Wrdsw Width dependence of rdsw 0.0 Wrsw Width dependence of rsw 0.0 Wrdw Width dependence of rdw 0.0 Wprwg Width dependence of prwg 0.0 Wprwb Width dependence of prwb 0.0 Wprt Width dependence of prt 0.0 Weta0 Width dependence of eta0 0.0 Wetab Width dependence of etab 0.0 Wpclm Width dependence of pclm 0.0 Wpdiblc1 Width dependence of pdiblc1 0.0 Wpdiblc2 Width dependence of pdiblc2 0.0 Wpdiblcb Width dependence of pdiblcb 0.0 Wfprout Width dependence of pdiblcb 0.0 Wpdits Width dependence of pdits 0.0 Wpditsd Width dependence of pditsd 0.0 Wpscbe1 Width dependence of pscbe1 0.0 Wpscbe2 Width dependence of pscbe2 0.0 Wpvag Width dependence of pvag 0.0 Wwr Width dependence of wr 0.0 Wdwg Width dependence of dwg 0.0 Wdwb Width dependence of dwb 0.0 Wb0 Width dependence of b0 0.0 Wb1 Width dependence of b1 0.0 Wcgsl Width dependence of cgsl 0.0 Wcgdl Width dependence of cgdl 0.0 Wckappas Width dependence of ckappas 0.0 Wckappad Width dependence of ckappad 0.0 Wcf Width dependence of cf 0.0 Wclc Width dependence of clc 0.0 Wcle Width dependence of cle 0.0 Walpha0 Width dependence of alpha0 0.0 Walpha1 Width dependence of alpha1 0.0 Wbeta0 Width dependence of beta0 0.0 Wagidl Width dependence of agidl 0.0 Wbgidl Width dependence of bgidl 0.0 Wcgidl Width dependence of cgidl 0.0 Wegidl Width dependence of egidl 0.0 Waigc Width dependence of aigc 0.0 Wbigc Width dependence of bigc 0.0 Wcigc Width dependence of cigc 0.0 Waigsd Width dependence of aigsd 0.0 Wbigsd Width dependence of bigsd 0.0 Wcigsd Width dependence of cigsd 0.0 Waigbacc Width dependence of aigbacc 0.0 Wbigbacc Width dependence of bigbacc 0.0 Wcigbacc Width dependence of cigbacc 0.0 Waigbinv Width dependence of aigbinv 0.0 Wbigbinv Width dependence of bigbinv 0.0 Wcigbinv Width dependence of cigbinv 0.0 Wnigc Width dependence of nigc 0.0 Wnigbinv Width dependence of nigbinv 0.0 Wnigbacc Width dependence of nigbacc 0.0 Wntox Width dependence of ntox 0.0 Weigbinv Width dependence for eigbinv 0.0 Wpigcd Width dependence for pigcd 0.0 Wpoxedge Width dependence for poxedge 0.0 Wvfbcv Width dependence of vfbcv 0.0 Wvfb Width dependence of vfb 0.0 Wacde Width dependence of acde 0.0 Wmoin Width dependence of moin 0.0 Wnoff Width dependence of noff 0.0 Wvoffcv Width dependence of voffcv 0.0 Wxrcrg1 Width dependence of xrcrg1 0.0 Wxrcrg2 Width dependence of xrcrg2 0.0 Wlambda Width dependence of Lambda 0.0 Wvtl Width dependence of Vtl 0.0 Wxn Width dependence of Xn 0.0 Weu Width dependence of eu 0.0 Wvfbsdoff Width dependence of Vfbsdoff 0.0 Pcdsc Cross-term dependence of cdsc 0.0 Pcdscb Cross-term dependence of cdscb 0.0 Pcdscd Cross-term dependence of cdscd 0.0 Pcit Cross-term dependence of cit 0.0 Pnfactor Cross-term dependence of nfactor 0.0 Pxj Cross-term dependence of xj 0.0 Pvsat Cross-term dependence of vsat 0.0 Pat Cross-term dependence of at 0.0 Pa0 Cross-term dependence of a0 0.0 Pags Cross-term dependence of ags 0.0 Pa1 Cross-term dependence of a1 0.0 Pa2 Cross-term dependence of a2 0.0 Pketa Cross-term dependence of keta 0.0 Pnsub Cross-term dependence of nsub 0.0 Pndep Cross-term dependence of ndep 0.0 Pnsd Cross-term dependence of nsd 0.0 Pphin Cross-term dependence of phin 0.0 Pngate Cross-term dependence of ngate 0.0 Pgamma1 Cross-term dependence of gamma1 0.0 Pgamma2 Cross-term dependence of gamma2 0.0 Pvbx Cross-term dependence of vbx 0.0 Pvbm Cross-term dependence of vbm 0.0 Pxt Cross-term dependence of xt 0.0 Pk1 Cross-term dependence of k1 0.0 Pkt1 Cross-term dependence of kt1 0.0 Pkt1l Cross-term dependence of kt1l 0.0 Pkt2 Cross-term dependence of kt2 0.0 Pk2 Cross-term dependence of k2 0.0 Pk3 Cross-term dependence of k3 0.0 Pk3b Cross-term dependence of k3b 0.0 Pw0 Cross-term dependence of w0 0.0 Pdvtp0 Cross-term dependence of dvtp0 0.0 Pdvtp1 Cross-term dependence of dvtp1 0.0 Plpe0 Cross-term dependence of lpe0 0.0 Plpeb Cross-term dependence of lpeb 0.0 Pdvt0 Cross-term dependence of dvt0 0.0 Pdvt1 Cross-term dependence of dvt1 0.0 Pdvt2 Cross-term dependence of dvt2 0.0 Pdvt0w Cross-term dependence of dvt0w 0.0 Pdvt1w Cross-term dependence of dvt1w 0.0 Pdvt2w Cross-term dependence of dvt2w 0.0 Pdrout Cross-term dependence of drout 0.0 Pdsub Cross-term dependence of dsub 0.0 Pvth0 (Pvtho) Cross-term dependence of vto 0.0 Pua Cross-term dependence of ua 0.0 Pua1 Cross-term dependence of ua1 0.0 Pub Cross-term dependence of ub 0.0 Pub1 Cross-term dependence of ub1 0.0 Puc Cross-term dependence of uc 0.0 Puc1 Cross-term dependence of uc1 0.0 Pu0 Cross-term dependence of u0 0.0 Pute Cross-term dependence of ute 0.0 Pvoff Cross-term dependence of voff 0.0 Pminv Cross-term dependence of minv 0.0 Pdelta Cross-term dependence of delta 0.0 Prdsw Cross-term dependence of rdsw  0.0 Prsw Cross-term dependence of rsw 0.0 Prdw Cross-term dependence of rdw 0.0 Pprwg Cross-term dependence of prwg  0.0 Pprwb Cross-term dependence of prwb  0.0 Pprt Cross-term dependence of prt 0.0 Peta0 Cross-term dependence of eta0 0.0 Petab Cross-term dependence of etab 0.0 Ppclm Cross-term dependence of pclm 0.0 Ppdiblc1 Cross-term dependence of pdiblc1 0.0 Ppdiblc2 Cross-term dependence of pdiblc2 0.0 Ppdiblcb Cross-term dependence of pdiblcb 0.0 Pfprout Cross-term dependence of pdiblcb 0.0 Ppdits Cross-term dependence of pdits 0.0 Ppditsd Cross-term dependence of pditsd 0.0 Ppscbe1 Cross-term dependence of pscbe1 0.0 Ppscbe2 Cross-term dependence of pscbe2 0.0 Ppvag Cross-term dependence of pvag 0.0 Pwr Cross-term dependence of wr 0.0 Pdwg Cross-term dependence of dwg 0.0 Pdwb Cross-term dependence of dwb 0.0 Pb0 Cross-term dependence of b0 0.0 Pb1 Cross-term dependence of b1 0.0 Pcgsl Cross-term dependence of cgsl 0.0 Pcgdl Cross-term dependence of cgdl 0.0 Pckappas Cross-term dependence of ckappas 0.0 Pckappad Cross-term dependence of ckappad 0.0 Pcf Cross-term dependence of cf 0.0 Pclc Cross-term dependence of clc 0.0 Pcle Cross-term dependence of cle 0.0 Palpha0 Cross-term dependence of alpha0 0.0 Palpha1 Cross-term dependence of alpha1 0.0 Pbeta0 Cross-term dependence of beta0 0.0 Pagidl Cross-term dependence of agidl 0.0 Pbgidl Cross-term dependence of bgidl 0.0 Pcgidl Cross-term dependence of cgidl 0.0 Pegidl Cross-term dependence of egidl 0.0 Paigc Cross-term dependence of aigc 0.0 Pbigc Cross-term dependence of bigc 0.0 Pcigc Cross-term dependence of cigc 0.0 Paigsd Cross-term dependence of aigsd 0.0 Pbigsd Cross-term dependence of bigsd 0.0 Pcigsd Cross-term dependence of cigsd 0.0 Paigbacc Cross-term dependence of aigbacc 0.0 Pbigbacc Cross-term dependence of bigbacc 0.0 Pcigbacc Cross-term dependence of cigbacc 0.0 Paigbinv Cross-term dependence of aigbinv 0.0 Pbigbinv Cross-term dependence of bigbinv 0.0 Pcigbinv Cross-term dependence of cigbinv 0.0 Pnigc Cross-term dependence of nigc 0.0 Pnigbinv Cross-term dependence of nigbinv 0.0 Pnigbacc Cross-term dependence of nigbacc 0.0 Pntox Cross-term dependence of ntox 0.0 Peigbinv Cross-term dependence for eigbinv 0.0 Ppigcd Cross-term dependence for pigcd 0.0 Ppoxedge Cross-term dependence for poxedge 0.0 Pvfbcv Cross-term dependence of vfbcv 0.0 Pvfb Cross-term dependence of vfb 0.0 Pacde Cross-term dependence of acde 0.0 Pmoin Cross-term dependence of moin 0.0 Pnoff Cross-term dependence of noff 0.0 Pvoffcv Cross-term dependence of voffcv 0.0 Pxrcrg1 Cross-term dependence of xrcrg1 0.0 Pxrcrg2 Cross-term dependence of xrcrg2 0.0 Plambda Cross-term dependence of Lambda 0.0 Pvtl Cross-term dependence of Vtl 0.0 Pxn Cross-term dependence of Xn 0.0 Peu Cross-term dependence of eu 0.0 Pvfbsdoff Cross-term dependence of Vfbsdoff 0.0 Saref Reference distance between OD edge to poly of one side m 1.0e-6 Sbref Reference distance between OD edge to poly of the other side m 1.0e-6 Wlod Width parameter for stress effect m 0.0 Ku0 Mobility degradation/enhancement coefficient for LOD m 0.0 Kvsat Saturation velocity degradation/enhancement parameter for LOD m 0.0 Kvth0 Threshold shift parameter for LOD V*m 0.0 Tku0 Temperature coefficient of Ku0 0.0 Llodku0 Length parameter for U0 LOD effect 0.0 Wlodku0 Width parameter for U0 LOD effect 0.0 Llodvth Length parameter for Vth LOD effect 0.0 Wlodvth Width parameter for Vth LOD effect 0.0 Lku0 Length dependence of Ku0 0.0 Wku0 Width dependence of Ku0 0.0 Pku0 Cross-term dependence of Ku0 0.0 Lkvth0 Length dependence of Kvth0 0.0 Wkvth0 Width dependence of Kvth0 0.0 Pkvth0 Cross-term dependence of Kvth0 0.0 Stk2 K2 shift factor related to stress effect on Vth m 0.0 Lodk2 K2 shift modification factor for stress effect 1.0 Steta0 Eta0 shift factor related to stress effect on Vth m 0.0 Lodeta0 Eta0 shift modification factor for stress effect 1.0 Noia Flicker noise parameter 6.25e41 (NMOS), 6.188e40 (PMOS) Noib Flicker noise parameter 3.125e26 (NMOS), 1.5e25 (PMOS) Noic Flicker noise parameter 8.75 Tnoia Thermal noise parameter 1.5 Tnoib Thermal noise parameter 3.5 Rnoia Thermal noise coefficient 0.577 Rnoib Thermal noise coefficient 0.37 (for version = 4.20, 4.21 or 4.30), 0.5164 (otherwise) Ntnoi Thermal noise parameter 1.0 Em Flicker noise parameter V/m 4.1e7 Ef Flicker noise frequency exponent 1.0 Af Flicker noise exponent 1.0 Kf Flicker noise coefficient 0.0 wBvsub substrate junction reverse breakdown voltage warning V wBvds gate oxide breakdown voltage warning V wBvds drain-source breakdown voltage warning V wIdsmax maximum drain-source current warning A wPmax maximum power dissipation warning W AllParams DataAccessComponent (DAC)-based parameters Netlist Format Model statements for the ADS circuit simulator may be stored in an external file. This is typically done with foundry model kits. For more information on how to set up and use foundry model kits, refer to the Design Kit Development manual. model modelname BSIM4 [parm=value]* The model statement starts with the required keyword model. It is followed by the modelname that will be used by mosfet components to refer to the model. The third parameter indicates the type of model; for this model it is BSIM4. Use either parameter NMOS=yes or PMOS=yes to set the transistor type. The rest of the model contains pairs of model parameters and values, separated by an equal sign. The name of the model parameter must appear exactly as shown in the parameters table-these names are case sensitive. Some model parameters have aliases, which are listed in parentheses after the main parameter name; these are parameter names that can be used instead of the primary parameter name. Model parameters may appear in any order in the model statement. Model parameters that are not specified take the default value indicated in the parameters table. For more information about the ADS circuit simulator netlist format, including scale factors, subcircuits, variables and equations, refer to "ADS Simulator Input Syntax" in the Using Circuit Simulators manual. Example: model Nch7 BSIM4 \      Vtho=0.7 Cjs=3e-4 NMOS=yes Notes/Equations For RFDE Users    Information about this model must be provided in a model file; refer to Netlist Format.  BSIM4 was developed by the Device Research Group of the Department of Electrical Engineering and Computer Science, University of California, Berkeley and copyrighted by the University of California.  More information about this model is available at http://www-device.eecs.berkeley.edu/%7ebsim3/  Several DC, AC, and capacitance parameters can be binned as described in the parameters table; these parameters follow this implementation: For example, for the parameter K1, the following relationships exist: P0=k1, PL=lkl, PW=wkl, PP=pkl. The Binunit parameter is a binning unit selector. If Binunit=1, the units of Leff and Weff used in the preceding binning equation have units of microns, otherwise meters. For example, for a device with Leff=0.5m and Weff=10m, if Binunit=1, parameter values are le5, le4, 2e4, and 3e4 for Vsat, Lvsat, Wvsat, and Pvsat, respectively, Therefore, the effective value of Vsat for this device is: Vsat = 1e5 + 1e4/0.5 + 2e4/10 + 3e4/(0.510) = 1.28e5 To get the same effective value of Vsat for Binunit=0, values of Vsat, Lvsat, Wvsat, and Pvsat would be 1e5, le-2, 2e-2, 3e-8, respectively. Thus: Vsat = 1e5 + 1e-2/0.5e6 + 2e-2/10e-6 + 3e -8/(0.5e-6  10e-6) = 1.28e5  DC operating point data is generated for this model. If a DC simulation is performed, device operating point data can be viewed for a component. The procedure for viewing device operating point data for a component is in the Using Circuit Simulators manual. The device operating point information that is displayed for the BSIM4 model is: Gm: small-signal Vgs to Ids transconductance, in Siemens Gmb: small-signal Vbs to Ids transconductance, in Siemens Gds: small-signal drain source conductance, in Siemens Vth: threshold voltage, in volts Vdsat: saturation voltage, in volts DqgDvgb: small-signal transcapacitance dQg/dVg, in farads DqgDvdb: small-signal transcapacitance dQg/dVd, in farads DqgDvsb: small-signal transcapacitance dQg/dVs, in farads DqbDvgb: small-signal transcapacitance dQb/dVg, in farads DqbDvdb: small-signal transcapacitance dQb/dVd, in farads DqbDvsb: small-signal transcapacitance dQb/dVs, in farads DqdDvgb: small-signal transcapacitance dQd/dVg, in farads DqdDvdb: small-signal transcapacitance dQd/dVd, in farads DqdDvsb: small-signal transcapacitance dQd/dVs, in farads  If 1 is not given, it is calculated by If 2 is not given, it is calculated by  If NDEP is not given and 1 is given, NDEP is calculated from If both 1 and NDEP are not given, NDEP defaults to 1.7e17cm-3 and is calculated from NDEP  If VBX is not given, it is calculated by  If VTH0 is not given it is calculated by where VFB = -1.0 If VTH0 is given, VFB defaults to  If K1 and K2 are not given, they are calculated by    If Cgso is not given, it is calculated by: If DLC is given and > 0.0 Cgso = DLC  Coxe - CGSL if Cgso < 0.0, CGSO = 0.0 Else CGSO = 0.6  XJ  Coxe If CGDO is not given, it is calculated by: If DLC is given and > 0.0 CGDO = DLC  Coxe - CGDL if CGDO < 0.0, CGDO = 0.0 Else CGDO = 0.6  XJ  Coxe If CGBO is not given, it is calculated by: CGBO = 2  DWC  Coxe  If CF is not given, it is calculated by  For dioMod = 0, if Xjbvs < 0.0, it is reset to 1.0 For dioMod = 2, if Xjbvs  0.0, it is reset to 1.0 For dioMod = 0, if Xjbvd < 0.0, it is reset to 1.0 For dioMod = 2, if Xjbvd  0.0, it is reset to 1.0  Imelt, Ijth, Ijthsfwd, Ijthsrev, Ijthdfwd, and Ijthdrev Parameters Imelt, Ijth, Ijthsfwd, Ijthsrev, Ijthdfwd, and Ijthdrev are used to determine the different diode limiting currents (also known as P-N junction explosion current). Imelt can be specified in the device model or in the Options component; the device model value takes precedence over the Options value. Ijth can be specified only in the Options component. If Ijthsfwd is not specified and Ijth is specified, Ijthsfwd = Ijth. If Ijthsrev is not specified and Ijth is specified, Ijthsrev = Ijth. If Ijthdfwd is not specified and Ijth is specified, Ijthdfwd = Ijth. If Ijthdrev is not specified and Ijth is specified, Ijthdrev = Ijth. If the Imelt value is less than the maximum value of Ijthsfwd, Ijthsrev, Ijthdfwd, and Ijthdrev, the Imelt value is increased to the maximum value. If Imelt is specified (in the model or in Options) all diode limiting currents (Ijthsfwd, Ijthsrev, Ijthdfwd, and Ijthdrev) = Imelt; otherwise, each diode limiting current is used to limit its own diode current.  Use AllParams with a DataAccessComponent to specify file-based parameters (refer to DataAccessComponent). Note that model parameters that are explicitly specified take precedence over those specified via AllParams. Set AllParams to the DataAccessComponent instance name.