该系列研究详细探讨了石墨烯场效应晶体管的噪声特性、电荷捕获机制、载流子迁移率、表面处理、电化学转移以及直流和射频性能。重点分析了载流子数量波动导致的超低1/f噪声水平、双时间尺度的电荷捕获机制、新型准分析模型下的本征载流子迁移率提取以及无羟基缓冲介质对器件性能的影响。此外，还研究了源漏间距对器件直流和射频特性的效应以及石墨烯的各向异性场效应迁移率。
发表论文
(1) Carrier-Number-Fluctuation induced ultralow 1/f noise level in top-gated graphene field effect transistors, ACS Applied Materials & Interfaces, 2017, 通讯作者(2) The two timescales in the charge trapping mechanism for the hysteresiss behavior in graphene field effect transistors, Journal of Materials Science: Materials in Electronics, 2016, 通讯作者(3) Intrisic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors, Journal of Physics D: Applied Physics, 2016, 通讯作者(4) Hydroxyl-free buffered dielectric for graphene field-effect transistors, Carbon, 2015, 第 1 作者(5) The sheet resistance of graphene under contact and its effect on the derived specific contact resistivity, Carbon, 2015, 通讯作者(6) The electrochemical transfer of CVD-graphene using agarose gel as solid electrolyte and mechanical support layer, Chemical communication, 2015, 通讯作者(7) Effect of source-gate spacing on direct current and radio frequency characteristic of graphene field effect transistor, Applied Physics Letters, 2015, 通讯作者(8) The anisotropy of field effect mobility of CVD graphene grown on copper foil, Small, 2014, 通讯作者(9) Study of AlN dielectric film on graphene by Raman microscopy, Appl. Phys. Lett, 2009, 第 1 作者(10) On the design of base-collector junction of InGaAs/InP DHBT, Science in China Series E: Technological Sciences, 2009, 第 1 作者(11) Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz, Solid-State Electronics, 2008, 第 1 作者(12) High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft of 170 GHz and fmax of 253 GHz, Chin. Phys. Lett., 2008, 第 1 作者(13) Surface-recombination-free InGaAs/InP HBTs and the base contact recombination, Solid-State Electronics, 2008, 第 1 作者
扫一扫
246
被折叠的 条评论
为什么被折叠?
到【灌水乐园】发言
