【电力电子】【2019.12】工业用三相全SIC PWM整流器

本文为土耳其中东技术大学（作者：CEM YOLAÇAN）的硕士论文，共124页。

本论文以SiC功率MOSFET为基础，设计了一种工业用三相PWM整流器，并设计了实验样机。PWM整流器的拓扑结构为三相全桥拓扑结构，可将三相400V交流线电压转换为500V至1000V之间的期望电压水平。PWM整流器具有允许有功功率双向流动的能力。新技术的SiC功率MOSFET可以在比IGBT更高的频率下工作，但具有更低的开关损耗和相当的导通损耗，因而具有更高的效率。此外，在更高的频率操作提供了低得多的噪声水平和更少的谐波失真。理论结果通过实验得到了验证。

In this thesis work, a three phase PWM Rectifier for industry applications will be designed by using SiC Power MOSFETs and its laboratory prototype will then be implemented. The topology of the PWM rectifier is the three phase full bridge topology to convert three phase 400 V AC line-to-line voltage to desirable voltage levels between 500V and 1000V. The PWM Rectifier has the capability of permitting the flow of active power in both directions. The new technology SiC Power MOSFETs can operate at higher frequencies than IGBTs which provide higher efficiency because of lower switching losses and comparable conduction losses. Furthermore, operation at higher frequencies also provides us much lower acoustic noise levels and less harmonic distortion in line current waveforms during the operation of the rectifier. The theoretical results will be verified by experimental work.

1.   引言
   

2. PWM整流器的工业应用
3. PWM整流器的工作原理和工作方式
4. 实验工作
5. 结论

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