EV24C512A 512Kbit Serial I2C Page EEPROM Review
Introduction
The EVASH Technology EV24C512A is a high-density, low-power 512Kbit EEPROM, organized as 65,536 words of 8 bits each. Designed for industrial and commercial applications, it offers advanced features including an I2C interface, robust memory architecture, high-speed performance, and exceptional reliability.
Features and Specifications
- Memory Capacity: 512 Kbits (64 Kbytes)
- Page Size: 128 bytes
- I2C Compatibility: Fully compliant with all I2C bidirectional data transfer protocols
- Speed: Operates up to 1 MHz
- Read Modes: Supports random and sequential reads
- Write Capabilities:
- Byte write time: 3 ms
- Page write time: 3 ms
- Supports partial page writes
- Data Protection: Equipped with a write protect pin for enhanced data security
- Noise Immunity: Schmitt Trigger inputs and input filtering
- Endurance: Rated at 4 million write cycles
- Data Retention: 200 years
- ESD Protection: Withstands ESD up to 8000V HBM
- Package: Available in an 8-lead UDFN package
Pin Configuration and Functional Description
The EV24C512A EEPROM features several key pins:
- A0-A2: Address inputs, allowing up to 8 devices on a single I2C bus
- SDA: Serial Data (bi-directional)
- SCL: Serial Clock Input
- WP: Write Protect
- GND: Ground
- Vcc: Power Supply
Device Operation
- Start/Stop Conditions: Initiated by high-to-low and low-to-high transitions of SDA with SCL high, respectively.
- Acknowledgment: The EEPROM sends a "0" to acknowledge receipt of each byte.
- Standby Mode: Enabled upon power-up and after receipt of the STOP bit.
Memory Organization
- The memory is organized with 512 pages of 128 bytes each.
- Requires a 16-bit data word address for random word addressing.
Write Operations
- Byte Write: Two 8-bit data word addresses followed by the data word, ending with a STOP condition to initiate the write cycle.
- Page Write: Allows up to 128 bytes to be written in one operation, with the address incrementing internally.
Read Operations
- Current Address Read: Reads the byte at the current address.
- Random Read: Requires a dummy byte write sequence to set the address before reading.
- Sequential Read: Reads consecutive bytes, automatically incrementing the address.
Identification Page
- An additional 128-byte page can be written and locked in read-only mode for storing sensitive data.
Electrical Characteristics
- Supply Voltage: 1.7V to 5.5V
- Operating Temperature Range: -40°C to +85°C (standard), up to +125°C (extended versions)
- Current Consumption:
- Read: 0.14 mA at 400 kHz
- Write: 0.28 mA at 400 kHz
- Standby: 0.03 μA
- Input/Output Capacitance:
- SDA: 8 pF
- A0, A1, A2, SCL: 6 pF
Reliability and Durability
- Endurance: 4 million write cycles
- Data Retention: 200 years
- ESD Protection: 8000V HBM
Package Information
- UDFN Package: Ultra-compact design suitable for space-constrained applications.
Conclusion
The EVASH EV24C512A EEPROM is an outstanding choice for applications requiring high memory density, low power consumption, and robust data protection. Its advanced features, such as high-speed I2C compatibility, extensive endurance, and enhanced noise immunity, make it a reliable component for both industrial and commercial uses. The additional Identification Page adds a layer of security, making it suitable for storing sensitive parameters. Overall, the EV24C512A stands out as a versatile and durable memory solution.
EVASH 官网
www.evashtec.com
规格书百度云下载
链接: https://pan.baidu.com/s/1IVMXhjZQSH4MUZM6pl_40w?pwd=rn3v 提取码: rn3v
EVASH EEPROM 官方淘宝店
https://shop260382949.taobao.com/?spm=pc_detail.29232929/evo365560b447259.shop_block.dentershop.7eb47dd659UOm8