半导体导电的机理。
Gated和Non-gated channel情况下的仿真。
C. A. Liu, X. J. Li, Y. Y. Luo, Y. Wang, S. J. Hu, C. N. Liu, X. C. Liang, H. Zhou, J. Chen, J. C. She and S. Z. Deng, How Materials and Device Factors Determine the Performance: A Unified Solution for Transistors with Nontrivial Gates and Transistor-Diode Hybrid Integration, ADVANCED SCIENCE, DOI: 10.1002/advs.202104896. (DOI: https://doi.org/10.1002/advs.202104896)