CCS v5中烧写Flash实录：成功+失败

记于2013年08月23日

环境：Win7 + CCS v5 +XDS100v2仿真器 + TMS320CF2812芯片

烧写方法：将SRAM.cmd替换成FLASH.cmd。一个通用的用于F2812的FLASH.cmd 例子为

MEMORY
{
PAGE 0 : 
   OTP         : origin = 0x3D7800, length = 0x000800
   FLASHJ      : origin = 0x3D8000, length = 0x002000
   FLASHI      : origin = 0x3DA000, length = 0x002000
   FLASHH      : origin = 0x3DC000, length = 0x004000 
   FLASHG      : origin = 0x3E0000, length = 0x004000
   FLASHF      : origin = 0x3E4000, length = 0x004000
   FLASHE      : origin = 0x3E8000, length = 0x004000 
   FLASHD      : origin = 0x3EC000, length = 0x004000
   FLASHC      : origin = 0x3F0000, length = 0x004000
   FLASHB      : origin = 0x3F4000, length = 0x002000 
   FLASHA      : origin = 0x3F6000, length = 0x001FF6
   BEGIN       : origin = 0x3F7FF6, length = 0x000002
   PASSWDS     : origin = 0x3F7FF8, length = 0x000008
   ROM         : origin = 0x3FF000, length = 0x000FC0
   VECTORS     : origin = 0x3FFFC2, length = 0x00003E
         
PAGE 1 : 
   /* SARAM                     */     
   RAMM0M1    : origin = 0x000000, length = 0x000800

   /* Peripheral Frame 0:   */
   DEV_EMU    : origin = 0x000880, length = 0x000180
   FLASH_REGS : origin = 0x000A80, length = 0x000060
   CSM        : origin = 0x