三星(Samsung) NAND Flash列表 关键字:器件 NAND-Flash Samsung
型号 | 结构 | 页结构 | 块结构 | 工作电压(V) | 温度 | 读速度 (nS) | 封装 | 生产状态 | 注释 | 8Gb | K9W8G08U1M | 1M x 8 | | | 2.7 ~ 3.6 | C,I | 50 | 48TSOP1 | 工程样品 | 90nm Dual die (4G DDP x 2) | 4Gb | K9K4G08QA0M | 512M x 8 | | | 1.70 ~ 1.95 | C,I | 50 | 48TSOP1 | 工程样品 | 90nm Dual die | K9K4G08U0M | | | 2.7 ~ 3.6 | 工程样品 | K9W4G08U1M | | | 量产 | 0.12µm Dual die (2G DDP x 2) | K9K4G16Q0M | 256M x 16 | | | 1.70 ~ 1.95 | 50 | 工程样品 | 90nm Dual die | K9K4G16U0M | | | 2.7 ~ 3.6 | 工程样品 | K9W4G16U1M | | | 量产 | 0.12µm Dual die (2G DDP x 2) | 2Gb | K9F2G08U0M | 256M x 8 | | | 2.7 ~ 3.6 | C,I | 50 | 48TSOP1 | Jan. '04样品 | 90nm | K9K2G08U0M | | | 80 | 量产 | 0.12µm Dual die | K9K2G08Q0M | | | 1.70 ~ 1.95 | 50 | 量产 | K9F2G08Q0M | | | 工程样片 | 90nm | K9K2G16U0M | 128M x 16 | | | 2.7 ~ 3.6 | C,I | 50 | 48TSOP1 | 量产 | 0.12µm Dual die | K9K2G16Q0M | | | 1.70 ~ 1.95 | 80 | 工程样片 | K9F2G16Q0M | | | 1.70 ~ 1.95 | 50 | 工程样片 | 90nm | K9F2G16U0M | | | 2.7 ~ 3.6 | Jan.'04样品 | 1Gb | K9F1G08Q0A | 128M x 8 | | | 1.70 ~ 1.95 | C,I | 50 | 48TSOP1 | 开发中 | - | K9F1G08D0A | | | 2.4 ~ 2.9 | K9F1G08U0A | | | 2.7 ~ 3.6 | 48TSOP1, 48WSOP1 | K9K1G08Q0A | | | 1.70 ~ 1.95 | 60 | 48TSOP1, 63TBGA | 已量产 | 0.12µm,双硅片 (512Mb x 2) | K9F1G08U0A | | | 2.7 ~ 3.6 | 50 | 48TSOP1, 48WSOP1, 63TBGA | 48TSOP1 | K9F1G08D0M | | | 2.4 ~ 2.9 | 0.12µm | K9F1G08Q0M | | | 1.70 ~ 1.95 | K9F1G08U0M | | | 2.7 ~ 3.6 | 48TSOP1, 48WSOP1 | K9K1G08U0M | | | 48TSOP1 | 0.15µm,双硅片 (512Mb x 2) | K9K1G16Q0A | 128M x 16 | | | 1.7 ~ 1.95 | C,I | 60 | 48TSOP1, 63TBGA | 已量产 | 0.15µm,双硅片 (512Mb x 2) | K9K1G16U0A | 64M x 16 | | | 2.7 ~ 3.6 | C,I | 50 | 48TSOP1 | 已量产 | 0.15µm,双硅片 (512Mb x 2) | K9F1G16D0M | 2.4 ~ 2.9 | 0.12µm | K9F1G16Q0M | | | 1.70 ~ 1.95 | 80 | K9F1G16U0M | | | 2.7 ~ 3.6 | 50 | 512Mb | K9F1208Q0B | 64M x 8 | | | 1.7~1.95 | C,I | 50 | 63TBGA | 开发中 | - | K9F1208U0B | | | 2.7 ~ 3.6 | 48TSOP1, 63TBGA, 48WSOP1 | - | K9F1208D0B | | | 2.4 ~ 2.9 | 48TSOP1, 63TBGA | - | K9F1208D0C | | | 2.4 ~ 2.9 | 63TBGA | 已量产 | 0.12µm,双硅片 (256Mb x 2) | K9F1208Q0C | | | 1.7~1.95 | K9F1208U0C | | 2.7 ~ 3.6 | K9F1208D0A | | | 2.4 ~ 2.9 | 48TSOP1 | Being phased out, MCP only | 0.12µm | K9F1208U0A | 2.7 ~ 3.6 | 48TSOP1, 48WSOP | 已量产 | K9F1208Q0A | 1.7 ~ 1.95 | 60 | 48TSOP1, 63TBGA, 48WSOP1 | Being phased out, MCP only | 0.12µm | K9F1208U0M | 2.7 ~ 3.6 | 50 | 48TSOP1 | 已量产 | 0.15µm | K9F1216D0C | 32M x 8 | | | 2.4 ~ 2.9 | | 50 | 63TBGA | 已量产 | 0.12µm,双硅片 (256Mb x 2) | K9F1216Q0C | | | 1.7 ~ 1.95 | 60 | K9F1216U0C | | | 2.7 ~ 3.6 | 50 | K9F1216D0A | | | 2.4 ~ 2.9 | 50 | 48TSOP1 | 0.12µm | K9F1216Q0A | | | 1.7 ~ 1.95 | 60 | 63TBGA | Jun. '04量产 | 0.12µm | K9F1216U0A | | | 2.7 ~ 3.6 | 50 | 48TSOP1 | 已量产 | 0.15µm | 256Mb | K9F5608D0C | 32M x 8 | | | 2.4 ~ 2.9 | C,I | 50 | 48TSOP1, 63TBGA | 已量产 | 0.12µm | K9F5608Q0C | | | 1.7 ~ 1.95 | 63TBGA | K9F5608Q0C | | | 2.7 ~ 3.6 | 48TSOP1, 63TBGA, 48WSOP | K9F5608Q0B | | | 1.7 ~ 1.9 | 63TBGA | 0.15µm | K9F5608U0B | | | 2.7 ~ 3.6 | 48TSOP1, 63TBGA, 48WSOP | K9F5608U0A | | | 48TSOP1 | 0.18µm | K9F5616Q0C | 16M x 16 | | | 1.7~1.95 | 63TBGA | 0.12µm | K9F5616U0C | | | 2.7 ~3.6 | 48TSOP1, 63TBGA, 48WSOP1 | K9F5616Q0B | | | 1.65 ~ 1.95 | 63TBGA | 0.15µm | K9F5616U0B | | | 2.7 ~ 3.6 | 48TSOP1, 63TBGA | 128Mb | K9F2808Q0C | 16M x 8 | | | 1.7 ~ 1.9 | C,I | 50 | 63TBGA | Jun. '04量产 | 0.12µm | K9F2808U0C | 2.7 ~ 3.6 | 48TSOP1, 63TBGA 48WSOP1 | 已量产 | K9F2808U0C | 2.7 ~ 3.6 | 48TSOP1, 63TBGA 48WSOP1 | Jun.'04可量产 TBGA | 0.15µm | K9F2816Q0C | 8M x 16 | | | 1.7 ~ 1.9 | 63TBGA | Jun. '04量产 | 0.12µm | K9F2808U0B | 2.7 ~ 3.6 | 48TSOP1, 63TBGA | 已量产 | K9F2808U0A | 1.7 ~ 1.95 | 63TBGA | Jun. '04量产 | 0.15µm | 64Mb | K9F6408Q0C | 8M x 8 | | | 1.65 ~ 1.95 | C,I | 50 | 48TBGA | Engineering Sample | 0.15µm | K9F6408Q0C | 2.7 ~ 3.6 | 44TSOP2 | K9F6408Q0C | Mass Production | 0.22µm | K9F6408Q0C | Begin Phased out | 0.27µm | 32Mb | ...略 | 16Mb | ...略 | 8Mb | ...略 | 4Mb | ...略 | [Note] 1.Operating Temperature(Celsius); C: Commercial(0°C~70°C), I: Industrial(-40°C~85°C) 2.To get pinout and package 更新时间:
03-12-21
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