MTBF平均故障间隔时间

MTBF平均故障间隔时间

MTBF,即平均故障间隔时间,英文全称是**“Mean Time Between Failure”。是衡量一个产品(尤其是电器产品)的可靠性指标**。单位为“小时”。它反映了产品的时间质量,是体现产品在规定时间内保持功能的一种能力。具体来说,是指相邻两次故障之间的平均工作时间,也称为平均故障间隔

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概括地说,产品故障少的就是可靠性高,产品的故障总数与寿命单位总数之比叫“故障率”(Failure rate)。它仅适用于可维修产品。同时也规定产品在总的使用阶段累计工作时间与故障次数的比值为MTBF。磁盘阵列产品一般MTBF不能低于50000小时。

MTBF值是产品设计时要考虑的重要参数,可靠度工程师或设计师经常使用各种不同的方法与标准来估计产品的MTBF值。相关标准包括MIL-HDBK-217FTelcordia SR332Siemens NormFides或UTE C 80-810(RDF2000)等。不过这些方法估计到的值和实际的平均故障间隔仍有相当的差距。计算平均故障间隔的目的是为了找出设计中的薄弱环节

MTBF的数学式表达:
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在概率论中,可用ƒ(t)形式的概率密度方程表示MTBF,既有:
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此处ƒ指的是直到下次失效经过时长的概率密度方程——满足标准概率密度方程
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设有一个可修复的产品在使用过程中,共计发生过N次故障,每次故障后经过修复又和新的一样继续投入使用,其工作时间分别为:T0,T1。那么产品的平均故障间隔时间,也就是平均寿命为Q为:(T0+T1)/N

关于 MTBF值的计算方法,最通用的权威性标准MIL-HDBK-217GJB/Z299BBellcore,分别用于军工产品和民用产品。其中,MIL-HDBK-217是由美国国防部可靠性分析中心及Rome实验室提出并成为行业标准,专门用于军工产品MTBF值计算,GJB/Z299B是我国军用标准;而Bellcore是由AT&TBell实验室提出并成为商用电子产品MTBF值计算的行业标准

MTBF计算中主要考虑的是产品中每个器件的失效率。但由于器件在不同的环境、不同的使用条件下其失效率会有很大的区别,例如,同一产品在不同的环境下,如在实验室和海洋平台上,其可靠性值肯定是不同的;又如一个额定电压为16V的电容在实际电压为25V和5V下的失效率肯定是不同的。所以,在计算可靠性指标时,必须考虑上述多种因素。所有上述这些因素,几乎无法通过人工进行计算,但借助于软件如MTBFcal软件和其庞大的参数库,我们就能够轻松得出MTBF值。

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MIL-HDBK-217F, Notice 1 is issued to correct minor typographical errors in the basic F Revision. MIL HDBK-217F(base document) provides the following changes based upon recently completed studies (see Ret 30 and 32 listed in Appendix C) 1. New failure rate prediction models are provided for the following nine major classes of microcircuits Monolithic Bipolar Digital and Linear Gate/Logic Array Devices Monolithic MOS Digital and Linear Gate/Logic Array Devices Monolithic Bipolar and MOS Digital Microprocessor Devices(Including Controllers Monolithic Bipolar and Mos Memory Devices Monolithic GaAs Digital Devices Monolithic GaAs MMIC Devices Hybrid Microcircuits Magnetic Bubble Memories Surface Acoustic Wave Devices This revision provides new prediction models for bipolar and Mos microcircuits with gate counts up to 60,000, linear microcircuits with up to 3000 transistors, bipolar and Mos digital microprocessor and co- processors up to 32 bits, memory devices with up to 1 million bits, GaAs monolithic microwave integrated circuits(MMICs)with up to 1,000 active elements, and GaAs digital ICs with up to 10,000 transistors. The C, factors have been extensively revised to reflect new technology devices with improved reliability, and the activation energies representing the temperature sensitivity of the dice(IT)have been changed for MOS devices and for memories. The Ca factor remains unchanged from the previous Handbook version, but includes pin grid arrays and surlace mount packages using the same model as hermetic, solder-sealed dual in-line packages. New values have been included for the quality factor (o), the learning factor(i, and the environmental factor(aE). The model for hybrid microcircuits has been revised to be simpler to use, to delete the temperature dependence of the seal and interconnect fallure rate contributions, and to provide a method of calculating chip junction temperatures 2. A new model for Very High Speed Integrated Circuits(VHSIC/HSIC Like)and very Large Scale Integration(VLSi)devices (gate counts above 60, 000 3. The reformatting of the entire handbook to make i easier to use. 4. A reduction in the number of environmental factors( F)from 27 to 14 5. A revised fallure rate model for Network Resistors 6. Revised models for TWTs and Klystrons based on data supplied by the Electronic Industries Association Microwave Tube Division Supersedes page vil of Revision F A1emn彐TTu"“11r4raeK
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