STM32CUBEIDE配置STM32F072使用FLASH进行读写操作

1. 配置

似乎没有与FLASH相关的…

2. 时钟

大同小异

3. 中断

中断：一定要打开

4. 增加代码部分

在此增加了 “stm32flash.c” 和 “stm32flash.h” 文件

4.1 stm32flash.c 内部代码

写入部分：

/*带检查的写入*/
#define FLASH_WAITETIME 1000

#define STM32_FLASH_BASE   0x08000000 		//STM32 FLASH的起始地址

#define STM_SECTOR_SIZE	2048	//大容量STM32的扇区大小为2K

uint16_t STMFLASH_BUF[STM_SECTOR_SIZE/2];

void STMFLASH_Write(uint32_t WriteAddr,uint16_t *pBuffer,uint16_t NumToWrite)
{
	uint32_t secpos;	   //扇区地址
	uint16_t secoff;	   //扇区内偏移地址(16位字计算)
	uint16_t secremain; //扇区内剩余地址(16位字计算)
 	uint16_t i;
	uint32_t offaddr;   //去掉0X08000000后的地址

	if(WriteAddr<STM32_FLASH_BASE||(WriteAddr>=(STM32_FLASH_BASE+1024*512)))
	{
		return;//非法地址
	}
	HAL_FLASH_Unlock();					//解锁
	offaddr=WriteAddr-STM32_FLASH_BASE;		//实际偏移地址.
	secpos=offaddr/STM_SECTOR_SIZE;			//扇区地址  0~127 for STM32F103RBT6
	secoff=(offaddr%STM_SECTOR_SIZE)/2;		//在扇区内的偏移(2个字节为基本单位.)
	secremain=STM_SECTOR_SIZE/2-secoff;		//扇区剩余空间大小
	if(NumToWrite<=secremain)
	{
		secremain=NumToWrite;//不大于该扇区范围
	}
	while(1)
	{
		STMFLASH_Read(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//读出整个扇区的内容
		for(i=0;i<secremain;i++)	//校验数据
		{
			if(STMFLASH_BUF[secoff+i]!=0XFFFF)
			{
				break;//需要擦除
			}
		}
		if(i<secremain)				//需要擦除
		{
			FLASH_PageErase(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE);	//擦除这个扇区
			FLASH_WaitForLastOperation(FLASH_WAITETIME);            	//等待上次操作完成
			CLEAR_BIT(FLASH->CR, FLASH_CR_PER);							//清除CR寄存器的PER位，此操作应该在FLASH_PageErase()中完成！
																		//但是HAL库里面并没有做，应该是HAL库bug！
			for(i=0;i<secremain;i++)//复制
			{
				STMFLASH_BUF[i+secoff]=pBuffer[i];
			}
			STMFLASH_Write_NoCheck(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//写入整个扇区
		}else
		{
			FLASH_WaitForLastOperation(FLASH_WAITETIME);       	//等待上次操作完成
			STMFLASH_Write_NoCheck(WriteAddr,pBuffer,secremain);//写已经擦除了的,直接写入扇区剩余区间.
		}

		if(NumToWrite==secremain)
		{
			break;//写入结束了
		}
		else//写入未结束
		{
			secpos++;				//扇区地址增1
			secoff=0;				//偏移位置为0
		   	pBuffer+=secremain;  	//指针偏移
			WriteAddr+=secremain*2;	//写地址偏移(16位数据地址,需要*2)
		   	NumToWrite-=secremain;	//字节(16位)数递减
			if(NumToWrite>(STM_SECTOR_SIZE/2))
			{
				secremain=STM_SECTOR_SIZE/2;//下一个扇区还是写不完
			}
			else
			{
				secremain=NumToWrite;//下一个扇区可以写完了
			}
		}
	};
	HAL_FLASH_Lock();		//上锁
}


/*
 *   无检查写入
 *   WriteAddr - 地址
 *   pBuffer - 数据
 *   NumToWrite - 长度
 *
 * */
void STMFLASH_Write_NoCheck(uint32_t WriteAddr,uint16_t *pBuffer,uint16_t NumToWrite)
{
	uint16_t i;
	for(i=0;i<NumToWrite;i++)
	{
		HAL_FLASH_Program(FLASH_TYPEPROGRAM_HALFWORD,WriteAddr,pBuffer[i]);
	  WriteAddr+=2;		//地址增加2.
	}
}

读取部分：

/*
 * 读取半字  16位
 * faddr - 地址
 * */
uint16_t STMFLASH_ReadHalfWord(uint32_t faddr)
{
	return *(__IO uint16_t*)faddr;
}

/*读取len个16位数据*/
void STMFLASH_Read(uint32_t ReadAddr,uint16_t *pBuffer,uint16_t NumToRead)
{
	uint16_t i;
	for(i=0;i<NumToRead;i++)
	{
		pBuffer[i]=STMFLASH_ReadHalfWord(ReadAddr);//读取2个字节.
		ReadAddr+=2;//偏移2个字节.
	}
}

4.2 stm32flash.h 内部代码

#ifndef __STMFLASH_H
#define __STMFLASH_H

#include "stm32f0xx_hal.h"
#include "main.h"


void STMFLASH_Write(uint32_t WriteAddr,uint16_t *pBuffer,uint16_t NumToWrite);
void STMFLASH_Write_NoCheck(uint32_t WriteAddr,uint16_t *pBuffer,uint16_t NumToWrite);

void STMFLASH_Read(uint32_t ReadAddr,uint16_t *pBuffer,uint16_t NumToRead);
uint16_t STMFLASH_ReadHalfWord(uint32_t faddr);

#endif

4.3 例子

#define  FLASH_0400_ADDR   0x0800F000   //地址宏  60K

uint16_t R_init_data = 16000;
uint16_t  R_0400_F=16000;

if(STMFLASH_ReadHalfWord(FLASH_0400_ADDR) > 50000) //读半字 2byte，16位数据，初始为0xFFFF(65535)；
{
 STMFLASH_Write(FLASH_0400_ADDR, &R_init_data, 1); //写入16位数据，16000(0x3E80）,长度1个半字，2byte（1个16位数据）；
}
else
{
 R_0400_F = STMFLASH_ReadHalfWord(FLASH_0400_ADDR); //读取数据赋值
}