mjd122的典型应用_MJD122T4中文资料

1/8

August

2002

MJD122-1

/

MJD122T4

MJD127-1

/

MJD127T4

COMPLEMENTARY

POWER

DARLINGTON

TRANSISTORS

s

STMicroelectronics

PREFERRED

SALESTYPES

s

LOW

BASE-DRIVE

REQUIREMENTS

s

INTEGRATED

ANTIPARALLEL

COLLECTOR-EMITTER

DIODE

s

THROUGH

HOLE

TO-251

(IPAK)

POWER

PACKAGE

IN

TUBE

(SUFFIX

“-1”)

s

SURFACE

MOUNTING

TO-252

(DPAK)

POWER

PACKAGE

IN

TAPE

&

REEL

(SUFFIX

“T4”)

s

ELECTRICALLY

SIMILAR

TO

TIP122

AND

TIP127

APPLICATIONS:

s

GENERAL

PURPOSE

SWITCHING

AND

AMPLIFIER

DESCRIPTION

The

MJD122

and

MJD127

form

complementary

NPN

-

PNP

pair.

They

are

manufactured

using

Epitaxial

Base

technology

for

cost-effective

performance.

ABSOLUTE

MAXIMUM

RATINGS

For

PNP

types

voltage

and

current

values

are

negative.

Ordering

Code

Marking

Package

Shipment

MJD122T4

MJD122-1

MJD127T4

MJD127-1

MJD122

MJD122

MJD127

MJD127

TO-252

(DPAK)

TO-251

(IPAK)

TO-252

(DPAK)

TO-251

(IPAK)

Tape

&

Reel

Tube

Tape

&

Reel

Tube

Symbol

Parameter

Value

Unit

NPN

MJD122

PNP

MJD127

V

CBO

Collector-Base

Voltage

(I

E

=

0)

100

V

V

CEO

Collector-Emitter

Voltage

(I

B

=

0)

100

V

V

EBO

Emitter-Base

Voltage

(I

C

=

0)

5

V

I

C

Collector

Current

5

A

I

CM

Collector

Peak

Current

(t

p

<

5

ms)

8

A

I

B

Base

Current

0.1

A

P

tot

Total

Dissipation

at

T

c

=

25

°

C

20

W

T

stg

Storage

Temperature

–65

to

150

°

C

T

j

Max.

Operating

Junction

Temperature

150

°

C

3

2

1

1

3

TO-252

DPAK

(Suffix

”T4”)

TO-251

IPAK

(Suffix

”-1”)

INTERNAL

SCHEMATIC

DIAGRAM

R

1

Typ.

=

10

K

Ω

R

2

Typ.

=

150

Ω

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