1/8
August
2002
MJD122-1
/
MJD122T4
MJD127-1
/
MJD127T4
COMPLEMENTARY
POWER
DARLINGTON
TRANSISTORS
s
STMicroelectronics
PREFERRED
SALESTYPES
s
LOW
BASE-DRIVE
REQUIREMENTS
s
INTEGRATED
ANTIPARALLEL
COLLECTOR-EMITTER
DIODE
s
THROUGH
HOLE
TO-251
(IPAK)
POWER
PACKAGE
IN
TUBE
(SUFFIX
“-1”)
s
SURFACE
MOUNTING
TO-252
(DPAK)
POWER
PACKAGE
IN
TAPE
&
REEL
(SUFFIX
“T4”)
s
ELECTRICALLY
SIMILAR
TO
TIP122
AND
TIP127
APPLICATIONS:
s
GENERAL
PURPOSE
SWITCHING
AND
AMPLIFIER
DESCRIPTION
The
MJD122
and
MJD127
form
complementary
NPN
-
PNP
pair.
They
are
manufactured
using
Epitaxial
Base
technology
for
cost-effective
performance.
ABSOLUTE
MAXIMUM
RATINGS
For
PNP
types
voltage
and
current
values
are
negative.
Ordering
Code
Marking
Package
Shipment
MJD122T4
MJD122-1
MJD127T4
MJD127-1
MJD122
MJD122
MJD127
MJD127
TO-252
(DPAK)
TO-251
(IPAK)
TO-252
(DPAK)
TO-251
(IPAK)
Tape
&
Reel
Tube
Tape
&
Reel
Tube
Symbol
Parameter
Value
Unit
NPN
MJD122
PNP
MJD127
V
CBO
Collector-Base
Voltage
(I
E
=
0)
100
V
V
CEO
Collector-Emitter
Voltage
(I
B
=
0)
100
V
V
EBO
Emitter-Base
Voltage
(I
C
=
0)
5
V
I
C
Collector
Current
5
A
I
CM
Collector
Peak
Current
(t
p
<
5
ms)
8
A
I
B
Base
Current
0.1
A
P
tot
Total
Dissipation
at
T
c
=
25
°
C
20
W
T
stg
Storage
Temperature
–65
to
150
°
C
T
j
Max.
Operating
Junction
Temperature
150
°
C
3
2
1
1
3
TO-252
DPAK
(Suffix
”T4”)
TO-251
IPAK
(Suffix
”-1”)
INTERNAL
SCHEMATIC
DIAGRAM
R
1
Typ.
=
10
K
Ω
R
2
Typ.
=
150
Ω
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