Motorola Bipolar Power Transistor Device Data
Complementary
Darlington
Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
•
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
•
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
•
Lead Formed Version Available in 16 mm T
ape and Reel (“T4” Suffix)
•
Surface Mount Replacements for 2N6040–2N6045 Series, TIP120–TIP122
Series, and TIP125–TIP127 Series
•
Monolithic Construction With Built–in Base–Emitter Shunt Resistors
•
High DC Current Gain — h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
•
Complementary Pairs Simplifies Designs
MAXIMUM RATINGS
Rating
Symbol
MJD122
MJD127
Unit
Collector–Emitter Voltage
V
CEO
100
Vdc
Collector–Base Voltage
V
CB
100
Vdc
Emitter–Base Voltage
V
EB
5
Vdc
Collector Current
—
Continuous
Peak
I
C
8
16
Adc
Base Current
I
B
120
mAdc
Total Power Dissipation @ T
C
= 25
_
C
Derate above 25
_
C
P
D
20
0.16
Watts
W/
_
C
Total Power Dissipation* @ T
A
= 25
_
C
Derate above 25
_
C
P
D
1.75
0.014
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–
65 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
6.25
_
C/W
Thermal Resistance, Junction to Ambient*
R
θ
JA
71.4
_
C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I
C
= 30 mAdc, I
B
= 0)
V
CEO(sus)
100
—
Vdc
Collector Cutoff Current
(V
CE
= 50 Vdc, I
B
= 0)
I
CEO
—
10
µ
Adc
*
These ratings are applicable when surface mounted on the minimum pad sizes recommended.
(continued)
Preferred
devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD122/D
©
Motorola, Inc. 1995
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