晶体管基本原理

最新推荐文章于 2022-06-13 18:22:41 发布

waynechard

最新推荐文章于 2022-06-13 18:22:41 发布

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分类专栏：半导体物理基础文章标签：其他经验分享物理学

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1. 什么是半导体

2. 原子理论不可用于固体

3. 固体的能带理论

4. 导体，绝缘体，半导体能带之间的区别

5. 本征半导体

6. 半导体中的产生与复合

7. 非本征N型半导体

8. 非本征P型半导体

9. 非本征半导体中的少子

10. PN结

11. 扩散，漂移，势垒

12. 正向偏置

13. 反向偏置

14.正偏与反偏的电流机制

15 PN二极管的特性曲线

16 PN结的击穿

17 半波整流器 Half Wave Rectifier

18 全波整流器

19 齐纳二极管，齐纳击穿

20 齐纳二极管稳压器

The main difference between Zener breakdown and avalanche breakdown is their mechanism of occurrence. Zener breakdown occurs because of the high electric field whereas, the avalanche breakdown occurs because of the collision of free electrons with atoms. Both these breakdowns can occur simultaneously. Let us look at the other differences between them in the below table.

Zener Breakdown	Avalanche Breakdown
The process in which the electrons move across the barrier from the valence band of p-type material to the conduction band of n-type material is known as Zener breakdown.	The process of applying high voltage and increasing the free electrons or electric current in semiconductors and insulating materials is called an avalanche breakdown.
This is observed in Zener diodes having a Zener breakdown voltage VzVz of 5 to 8 volts.	This is observed in Zener diode having a Zener breakdown voltage VzVz greater than 8 volts.
The valence electrons are pulled into conduction due to the high electric field in the narrow depletion region.	The valence electrons are pushed to conduction due to the energy imparted by accelerated electrons, which gain their velocity due to their collision with other atoms.
The increase in temperature decreases the breakdown voltage.	The increase in temperature increases the breakdown voltage.
The VI characteristics of a Zener breakdown has a sharp curve.	The VI characteristic curve of the avalanche breakdown is not as sharp as the Zener breakdown.
It occurs in diodes that are highly doped.	It occurs in diodes that are lightly doped.