NXP KV30 擦写flash跑飞的问题解决

之前验证flash擦写功能试过擦除后写入五六个字节的数据量没发现什麼问题，但最近调试iap，一次写入512的字节的发现芯片会跑飞重启。

后来发现是使能的SysTick这个中断的问题，项目没用操作系统内核，用systick做了个ms级延时，写flash写到十几二个个字节就进了一次中断导致跑飞，
知道原因解决也简单，写flash的时候关中断就好。

void FlashWrite(void *pBuffer, uint32_t WriteAddr, uint32_t ByteNumToWrite)
{
   static ftfx_cache_config_t s_cacheDriver;
   uint32_t pflashBlockBase = 0;
   uint32_t pflashTotalSize = 0;
   uint32_t pflashSectorSize = 0;
   hal_flash_security_state_t securityStatus = 0; /* Return protection status */
   memset(&s_cacheDriver, 0, sizeof(ftfx_cache_config_t));
   if (FTFx_CACHE_Init(&s_cacheDriver))
   {
      PRINTF("FLASH cache ERROR\n");
   };
   if (HAL_FlashInit(halFlashHandle) != kStatus_HAL_Flash_Success)
   {
      PRINTF("FLASH INIT ERROR\n");
   };
   // HAL_FlashGetProperty(halFlashHandle, kHAL_Flash_PropertyPflashBlockBaseAddr, &pflashBlockBase);
   // HAL_FlashGetProperty(halFlashHandle, kHAL_Flash_PropertyPflashTotalSize, &pflashTotalSize);
   HAL_FlashGetProperty(halFlashHandle, kHAL_Flash_PropertyPflashSectorSize, &pflashSectorSize);
   // PRINTF("\r\n PFlash Information: ");
   // PRINTF("\r\n Total Program Base Addr:\t%d KB, Hex: (0x%x)", (pflashBlockBase / 1024), pflashBlockBase);
   // PRINTF("\r\n Total Program Flash Size:\t%d KB, Hex: (0x%x)", (pflashTotalSize / 1024), pflashTotalSize);
   // PRINTF("\r\n Program Flash Sector Size:\t%d KB, Hex: (0x%x)\r\n", (pflashSectorSize / 1024), pflashSectorSize);

   if (HAL_FlashGetSecurityState(halFlashHandle, &securityStatus))
   {
      PRINTF("FLASH GetSecurity ERROR\n");
   }
   switch (securityStatus)
   {
   case kHAL_Flash_SecurityStateNotSecure:
      //      PRINTF("\r\n Flash is UNSECURE!");
      break;
   case kHAL_Flash_SecurityStateBackdoorEnabled:
      PRINTF("\r\n Flash is SECURE, BACKDOOR is ENABLED!");
      break;
   case kHAL_Flash_SecurityStateBackdoorDisabled:
      PRINTF("\r\n Flash is SECURE, BACKDOOR is DISABLED!");
      break;
   default:
      break;
   }
   {
      status_t result; /* Return code from each flash driver function */
      uint32_t i, failAddr, failDat;
      FTFx_CACHE_ClearCachePrefetchSpeculation(&s_cacheDriver, true);
      if (HAL_FlashEraseSector(halFlashHandle, WriteAddr, pflashSectorSize))
         PRINTF("FLASH Erase ERROR\n");
      if (HAL_FlashVerifyErase(halFlashHandle, WriteAddr, pflashSectorSize, kHAL_Flash_MarginValueUser))
         PRINTF("FLASH VerifyErase ERROR\n");
      uint32_t regPrimask = DisableGlobalIRQ(); //必须关中断，写flash进中断会跑飞
      if (HAL_FlashProgramUnaligned(halFlashHandle, WriteAddr, ByteNumToWrite, (uint8_t *)pBuffer))
         PRINTF("FLASH VerifyErase ERROR\n");
      EnableGlobalIRQ(regPrimask);
      FTFx_CACHE_ClearCachePrefetchSpeculation(&s_cacheDriver, false);
      //    PRINTF("READ FLASH VALUE %d", *(volatile uint16_t *)(WriteAddr));
   }
}

觉得有点坑爹的是sdk提供的HAL_FlashEraseSector擦除api里面有关中断，为什么到HAL_FlashProgramUnaligned写函数api却又不加上关中断。也花了不少时间找问题。