hal库-芯片内部flash读写-STM32F4系列

hal库-芯片内部flash读写-STM32F4系列

使用说明：读写芯片内部flash–stm32cubemx-hal库
1、使用stm32cubemx配置和建立自己的工程文件
2、添加user_flash.h和user_flash.c文件到工程中
3、在需要使用的地方include "user_flash.h"头文件
4、直接调用user_flash.c文件内函数

user_flash.h文件代码如下：

#ifndef __USER_FLASH_H
#define __USER_FLASH_H
#include "main.h"

#define BOARD_NUM_ADDR 0x0800C000

#define STM32_FLASH_BASE 0x08000000 //STM32 FLASH的起始地址
#define FLASH_WAITETIME 50000       //FLASH等待超时时间

//FLASH 扇区的起始地址
#define ADDR_FLASH_SECTOR_0 ((uint32_t)0x08000000)  //扇区0起始地址, 16 Kbytes
#define ADDR_FLASH_SECTOR_1 ((uint32_t)0x08004000)  //扇区1起始地址, 16 Kbytes
#define ADDR_FLASH_SECTOR_2 ((uint32_t)0x08008000)  //扇区2起始地址, 16 Kbytes
#define ADDR_FLASH_SECTOR_3 ((uint32_t)0x0800C000)  //扇区3起始地址, 16 Kbytes
#define ADDR_FLASH_SECTOR_4 ((uint32_t)0x08010000)  //扇区4起始地址, 64 Kbytes
#define ADDR_FLASH_SECTOR_5 ((uint32_t)0x08020000)  //扇区5起始地址, 128 Kbytes
#define ADDR_FLASH_SECTOR_6 ((uint32_t)0x08040000)  //扇区6起始地址, 128 Kbytes
#define ADDR_FLASH_SECTOR_7 ((uint32_t)0x08060000)  //扇区7起始地址, 128 Kbytes
#define ADDR_FLASH_SECTOR_8 ((uint32_t)0x08080000)  //扇区8起始地址, 128 Kbytes
#define ADDR_FLASH_SECTOR_9 ((uint32_t)0x080A0000)  //扇区9起始地址, 128 Kbytes
#define ADDR_FLASH_SECTOR_10 ((uint32_t)0x080C0000) //扇区10起始地址,128 Kbytes
#define ADDR_FLASH_SECTOR_11 ((uint32_t)0x080E0000) //扇区11起始地址,128 Kbytes

uint32_t STMFLASH_ReadWord(uint32_t faddr);                                      //读出字
void STMFLASH_Write(uint32_t WriteAddr, uint32_t *pBuffer, uint32_t NumToWrite); //从指定地址开始写入指定长度的数据
void STMFLASH_Read(uint32_t ReadAddr, uint32_t *pBuffer, uint32_t NumToRead);    //从指定地址开始读出指定长度的数据
#endif /*__USER_FLASH_H*/ 

user_flash.c文件代码如下：

#include "user_flash.h"
/**------------------------------------------
  * @brief  Gets the sector of a given address
  * @param  Address: Flash address
  * @retval The sector of a given address
  --------------------------------------------*/
uint8_t STMFLASH_GetFlashSector(uint32_t addr)
{
    if (addr < ADDR_FLASH_SECTOR_1)
        return FLASH_SECTOR_0;
    else if (addr < ADDR_FLASH_SECTOR_2)
        return FLASH_SECTOR_1;
    else if (addr < ADDR_FLASH_SECTOR_3)
        return FLASH_SECTOR_2;
    else if (addr < ADDR_FLASH_SECTOR_4)
        return FLASH_SECTOR_3;
    else if (addr < ADDR_FLASH_SECTOR_5)
        return FLASH_SECTOR_4;
    else if (addr < ADDR_FLASH_SECTOR_6)
        return FLASH_SECTOR_5;
    else if (addr < ADDR_FLASH_SECTOR_7)
        return FLASH_SECTOR_6;
    else if (addr < ADDR_FLASH_SECTOR_8)
        return FLASH_SECTOR_7;
    else if (addr < ADDR_FLASH_SECTOR_9)
        return FLASH_SECTOR_8;
    else if (addr < ADDR_FLASH_SECTOR_10)
        return FLASH_SECTOR_9;
    else if (addr < ADDR_FLASH_SECTOR_11)
        return FLASH_SECTOR_10;
    return FLASH_SECTOR_11;
}

uint32_t STMFLASH_ReadWord(uint32_t faddr)
{
    return *(__IO uint32_t *)faddr;
}

void STMFLASH_Write(uint32_t WriteAddr, uint32_t *pBuffer, uint32_t Num)
{
    FLASH_EraseInitTypeDef FlashEraseInit;
    HAL_StatusTypeDef FlashStatus = HAL_OK;
    uint32_t SectorError = 0;
    uint32_t addrx = 0;
    uint32_t endaddr = 0;
    if (WriteAddr < STM32_FLASH_BASE || WriteAddr % 4)
        return; //非法地址

    HAL_FLASH_Unlock();            //解锁
    addrx = WriteAddr;             //写入的起始地址
    endaddr = WriteAddr + Num * 4; //写入的结束地址

    if (addrx < 0X080C1000)
    {
        while (addrx < endaddr)
        {
            if (STMFLASH_ReadWord(addrx) != 0XFFFFFFFF)
            {
                FlashEraseInit.TypeErase = FLASH_TYPEERASE_SECTORS;     //擦除类型，扇区擦除
                FlashEraseInit.Sector = STMFLASH_GetFlashSector(addrx); //要擦除的扇区
                FlashEraseInit.NbSectors = 1;                           //一次只擦除一个扇区
                FlashEraseInit.VoltageRange = FLASH_VOLTAGE_RANGE_3;    //电压范围，VCC=2.7~3.6V之间!!
                if (HAL_FLASHEx_Erase(&FlashEraseInit, &SectorError) != HAL_OK)
                {
                    break; //发生错误了
                }
            }
            else
                addrx += 4;
            FLASH_WaitForLastOperation(FLASH_WAITETIME); //等待上次操作完成
        }
    }
    FlashStatus = FLASH_WaitForLastOperation(FLASH_WAITETIME); //等待上次操作完成
    if (FlashStatus == HAL_OK)
    {
        while (WriteAddr < endaddr) //写数据
        {
            if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, WriteAddr, *pBuffer) != HAL_OK) //写入数据
            {
                break; //写入异常
            }
            WriteAddr += 4;
            pBuffer++;
        }
    }
    HAL_FLASH_Lock(); //上锁
}

void STMFLASH_Read(uint32_t ReadAddr, uint32_t *pBuffer, uint32_t size)
{
    uint32_t i;
    for (i = 0; i < size; i++)
    {
        pBuffer[i] = STMFLASH_ReadWord(ReadAddr); //读取4个字节.
        ReadAddr += 4;                            //偏移4个字节.
    }
}

参考：https://my.oschina.net/u/4416479/blog/4645445
时间：2021.03.10
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