震撼发布：小容量低功耗多合一EEPROM问世！

今日，电子科技领域掀起了一场轰动。一款全新的、引领未来的小容量低功耗多合一EEPROM正式亮相，为电子设备存储方案带来了翻天覆地的变革！

这款革命性产品集先进技术和精湛设计于一身，以超小的体积和低功耗的特性领先同类产品。无论是智能手机、智能家居设备还是汽车电子系统，都能轻松实现高效的数据存储与管理。

新产品以2Kbit、4Kbit、8Kbit和16Kbit的容量强大，同时具备高速读写和异常低功耗的优势，为用户带来了前所未有的使用体验。其独特的设计和稳定的性能备受全球科技爱好者和专业人士的瞩目。

今日的发布，标志着科技领域迎来了一次真正的革命。这款小容量低功耗多合一EEPROM必将成为未来电子设备领域的标杆，引领行业发展的新方向。

EVASH EEPROM

EV24C02A EV24C04A EV24C08A EV24C16A

Description:

The EV24C02A/EV24C04A/EV24C08A/EV24C16A series stands as an exceptional range of EEPROM storage solutions, offering up to 16384 bits of serial electrically erasable and programmable read-only memory (EEPROM) to meet a diverse array of application needs. Each word comprises 256/512/1024/2048 bits, ensuring efficient data management and seamless integration.

For enhanced efficiency, this series is engineered to operate seamlessly in demanding environments, delivering high-speed data transfer and low power consumption. Its compact design and flexible pin configuration enhance system integration, making it suitable for space-constrained applications.

The EV24C02A/EV24C04A/EV24C08A/EV24C16A series represents the pinnacle of EVASH engineering prowess, boasting robust construction, advanced features, and unparalleled reliability. This series provides engineers with innovative solutions that redefine possibilities for data storage and management.

Key Features:

High-Capacity Storage: Offers a range of storage options from 2K bits to 16K bits, catering to diverse storage needs across various applications.

High-Speed Operation: Supports operation speeds of up to 1 MHz, ensuring rapid data read and write operations to enhance system responsiveness and performance.

Flexible Read Modes: Supports both random and sequential read modes, ensuring flexibility and convenience in data access to meet the requirements of different application scenarios.

Fast Write Operations: Byte write and page write operations can be completed within 3 milliseconds, ensuring efficient and speedy data programming.

Partial Page Writes: Provides partial page write functionality, effectively utilizing storage space and improving system efficiency.

Hardware Data Protection: Incorporates a write protect pin to provide hardware-level security for data, preventing unauthorized write operations.

High Reliability: Undergoes rigorous testing, supporting up to 1 million write cycles and retaining data for up to 100 years, ensuring long-term system stability.

Enhanced ESD/Latch-Up Protection: Offers enhanced ESD protection of up to 8000V, minimizing the risk of damage from electrostatic discharge and ensuring device reliability and stability.

UDFN and SOT23–5 Packages: Available in compact UDFN and SOT23–5 packages, suitable for various space-constrained design requirements, enhancing product flexibility and deployability.

EVASH EEPROM Wechat/WhatsApp/Phone: +86 18576689961