EV24CM2A Date Sheet

Description

The EV24CM2A offers a robust solution for serial electrically erasable and programmable readonly memory (EEPROM), providing a capacity of 2097152 bits organized as 262144 words of 8

bits each. Engineered with meticulous optimization, this integrated circuit excels in a wide range

of industrial and commercial applications, particularly suited for environments requiring lowpower and low-voltage operation.

Additionally, the EV24CM2A features an Identification Page (256 bytes), offering an extra layer of

security by allowing storage of sensitive application parameters that can be permanently locked

in Read-only mode for enhanced data protection.

Features

• Compatible with all I2C bidirectional data transfer protocols, facilitating integration into

various data communication environments.

• Memory array comprises 2048 Kbits (256 Kbytes) of EEPROM, with a page size of 256

bytes and an additional write lockable page.

• Operates on a single supply voltage with high speed, up to 1 MHz.

• Supports random and sequential read modes.

• Fast write speeds, with byte write within 8 ms and page write within 8 ms.

• Supports Error Correction Code (ECC) functionality for improved data transmission

reliability.

• Write Protect Pin provides hardware data protection.

• Equipped with Schmitt trigger and filtered inputs to suppress noise interference.

• Designed for high reliability, boasting endurance of 1 million write cycles and data

retention of 100 years.

• Enhanced ESD (Electrostatic Discharge)/Latch-up protection, up to HBM 8000V.

• Available in WLCSP (Wafer-Level Chip Scale Package) for space-constrained applications.

​🌐 Connect with EVASH:Ready to revolutionize your projects with the EV24CM2A? Visit our website at www.evashtec.com to explore the full range of EVASH's cutting-edge solutions. For inquiries and collaboration opportunities, reach out to us via email at louis@evashtec.com. Join our community on Telegram or WhatsApp at +86 18576689961 to stay updated on the latest innovations and developments.

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