2SC5824T100R
specifications
Product Attributes
Manufacturer :ROHM Semiconductor
Product Type: Bipolar Transistor - Bipolar Junction Transistor (BJT)
RoHS: Details
Installation style :SMD/SMT
Transistor polarity :NPN
Configuration :Single
Collector-emitter relatively large voltage VCEO:60 V
Collector - base voltage VCBO:60 V
Emitter - base voltage VEBO:6 V
Collector - emitter saturation voltage :200 mV
Relatively large DC collector current :3 A
Pd- Power dissipation :500 mW
Gain bandwidth product fT:200 MHz
Relatively small operating temperature :-
Relatively large operating temperature :+ 150 C
Series :2SC5824
Packaging :Reel
Encapsulation :Cut Tape
Encapsulation :MouseReel
Trademark :ROHM Semiconductor
Collector continuous current :3 A
Dc collector /Base Gain hfe Min:120
Dc current gain hFE relative maximum value :390
Height :1.5 mm
Length: 4.5mm
Product type: BJTs-Bipolar Transistors
1000
Subcategory :Transistors
Technology :Si
Width :2.5 mm
Unit weight :26 mg
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