2SC5824T100R

2SC5824T100R

specifications

Product Attributes

Manufacturer :ROHM Semiconductor

Product Type: Bipolar Transistor - Bipolar Junction Transistor (BJT)

RoHS: Details

Installation style :SMD/SMT

Transistor polarity :NPN

Configuration :Single

Collector-emitter relatively large voltage VCEO:60 V

Collector - base voltage VCBO:60 V

Emitter - base voltage VEBO:6 V

Collector - emitter saturation voltage :200 mV

Relatively large DC collector current :3 A

Pd- Power dissipation :500 mW

Gain bandwidth product fT:200 MHz

Relatively small operating temperature :-

Relatively large operating temperature :+ 150 C

Series :2SC5824

Packaging :Reel

Encapsulation :Cut Tape

Encapsulation :MouseReel

Trademark :ROHM Semiconductor

Collector continuous current :3 A

Dc collector /Base Gain hfe Min:120

Dc current gain hFE relative maximum value :390

Height :1.5 mm

Length: 4.5mm

Product type: BJTs-Bipolar Transistors

1000

Subcategory :Transistors

Technology :Si

Width :2.5 mm

Unit weight :26 mg

chipspulse

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