In the past decade, metal halide perovskites have emerged as a class of materials that can be used to design efficient light-emitting devices [Tan14].
In high-quality metal halide perovskite materials, the strong light absorption with sharp onset and low nonradiative charge carrier recombination rate leads to the existence of a considerable photon recycling (PR) effect, which can improve calcium Light extraction from titanium-based LEDs as light is redistributed from guided to outcoupling modes [Cho20].
To exploit the beneficial effects of photon recycling effects in perovskite semiconductors (PeLEDs) , accurate quantification of internal and external emission as a function of multilayer stack design is required. Recently, a simulation method based on the transfer matrix dipole model was proposed [Cho20], which allows a comprehensive analysis of the photon modes contributing to the internal emission as well as the recovery and parasitic absorption of the internally emitted photons. However, like many implementations of dipole radiation models, this method suffers from two important limitations. (i) To avoid divergence in dissipated power related to non-radiative near-field energy transfer , it requires discrete partitioning of the system to create a non-absorbing environment for the dipole source at a given location, as well as the choice of in-plane wave vectors As of now, these are sources of inaccuracy and introduce some arbitrariness into the solution. (ii) The method is purely optical and therefore does not allow consideration of electron transport and non-radiative loss aspects related to specific device stack design.
Therefore, we introduce a theoretical treatment of photon emission and recovery in optoelectronic semiconductor devices that is not only free from nonphysical disagreements, but also compatible with detailed equilibria, which are characterized by optical constants and quasi-Fermi level splitting (QFLS)