Klauk H-2021-1: Contact resistance

接触电阻的历史统计。

Transmission line method (TLM) analysis
基于欧姆接触假设，在线性区间适用。

Transmission line method (TLM) analysis of the transfer characteristics of the TFTs in the linear regime of operation indicates a width-normalized contact resistance.

S-parameter analysis
饱和区拟合
通过$f_T-L$曲线拟合出${\mu }_0$和$R_{C}W$

饱和区的有效迁移率。

(|h21| = |iD|/|iG|)

F. A. Viola, J. Barsotti, F. Melloni, G. Lanzani, Y.-H. Kim, V. Mattoli and M. Caironi, A sub-150-nanometre-thick and ultraconformable solution-processed all-organic transistor, Nature Communications, 2021, 12(1): 5842. (DOI: https://doi.org/10.1038/s41467-021-26120-2)

T. Zaki, R. Rodel, F. Letzkus, H. Richter, U. Zschieschang, H. Klauk and J. N. Burghartz, S-Parameter Characterization of Submicrometer Low-Voltage Organic Thin-Film Transistors, IEEE Electron Device Letters, 2013, 34(4): 520. (DOI: https://doi.org/10.1109/led.2013.2246759)