png选项 无交错 交错_什么是交错内存?

png选项 无交错 交错

It is a technique for compensating the relatively slow speed of DRAM(Dynamic RAM). In this technique, the main memory is divided into memory banks which can be accessed individually without any dependency on the other.

它是一种用于补偿DRAM(动态RAM)相对较慢的速度的技术。 在这种技术中,主存储器被划分为多个存储体,这些存储体可以独立访问而彼此之间没有任何依赖性。

For example: If we have 4 memory banks(4-way Interleaved memory), with each containing 256 bytes, then, the Block Oriented scheme(no interleaving), will assign virtual address 0 to 255 to the first bank, 256 to 511 to the second bank. But in Interleaved memory, virtual address 0 will be with the first bank, 1 with the second memory bank, 2 with the third bank and 3 with the fourt, and then 4 with the first memory bank again.

例如:如果我们有4个存储区(4路交错存储),每个存储区包含256个字节,则面向块的方案(无交织)将为第一个存储区分配虚拟地址0至255,将256至511分配给虚拟地址。第二银行。 但是在交错存储器中,虚拟地址0将与第一个存储体一起使用,1与第二个存储体一起存储,2与第三个存储体一起使用,3与Fourt一起存储,然后4与第一个存储体一起使用。

Hence, CPU can access alternate sections immediately without waiting for memory to be cached. There are multiple memory banks which take turns for supply of data.

因此,CPU可以立即访问备用段,而无需等待内存被缓存。 有多个存储库轮流提供数据。

Memory interleaving is a technique for increasing memory speed. It is a process that makes the system more efficient, fast and reliable.

内存交错是一种提高内存速度的技术。 这是使系统更加高效,快速和可靠的过程。

For example: In the above example of 4 memory banks, data with virtual address 0, 1, 2 and 3 can be accessed simultaneously as they reside in spearate memory banks, hence we do not have to wait for completion of a data fetch, to begin with the next.

例如:在上面的4个存储体示例中,虚拟地址为0、1、2和3的数据由于驻留在矛状存储体中,因此可以同时访问,因此我们不必等待数据提取完成即可。从下一个开始。

An interleaved memory with n banks is said to be n-way interleaved. In an interleaved memory system, there are still two banks of DRAM but logically the system seems one bank of memory that is twice as large.

具有n个存储体的交错存储器被称为n路交错 。 在交错存储系统中,仍然有两排DRAM,但从逻辑上讲,该系统似乎是一块两倍大的内存。

In the interleaved bank representation below with 2 memory banks, the first long word of bank 0 is floowed by that of bank 1, which is followed by the second long word of bank 0, which is followed by the second long word of bank 1 and so on.

在下面的带有2个存储体的交错存储体表示中,存储体0的第一个长字与存储体1的相移,其后是存储体0的第二个长字,其后是存储体1的第二个长字和以此类推。

The following figure shows the organization of two physical banks of n long words. All even long words of logical bank are located in physical bank 0 and all odd long words are located in physical bank 1.

下图显示了n个长字的两个物理银行的组织。 逻辑存储区的所有偶数长字都位于物理存储区0中,所有奇数长字都位于物理存储区1中。

Interleaved Memory

交织类型 (Types of Interleaving)

There are two methods for interleaving a memory:

有两种交错存储的方法:

2路交错 (2-Way Interleaved)

Two memory blocks are accessed at same time for writing and reading operations.

同时访问两个存储块以进行写入和读取操作。

4路交错 (4-Way Interleaved)

Four memory blocks are accessed at the same time.

可以同时访问四个存储块。

翻译自: https://www.studytonight.com/computer-architecture/interleaved-memory

png选项 无交错 交错

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