SD卡CSD寄存器V2.0中文数据手册

最新推荐文章于 2024-09-13 11:32:41 发布

刘亨亨

最新推荐文章于 2024-09-13 11:32:41 发布

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文章标签：储存器

本文链接：https://blog.csdn.net/moyu666/article/details/105392238

版权

本文详细介绍了SD卡的CSD寄存器V2.0，包括寄存器定义、数据读取访问时间、最大数据传输速率、命令类、数据块长度等关键信息，适用于理解SD卡的存储机制和操作规范。

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英文寄存器定义

Name	Field	Width	Value	Cell Type	CSD-slice
CSD structure	CSD_STRUCTURE	2	01b	R	[127:126]
reserved	-	6	00 0000b	R	[125:120]
data read access-time	(TAAC)	8	0Eh	R	[119:112]
data read access-time in CLK cycles (NSAC*100)	(NSAC)	8	00h	R	[111:104]
max. data transfer rate	(TRAN_SPEED)	8	32h or 5Ah	R	[103:96]
card command classes	CCC	12	01x110110101b	R	[95:84]
max. read data block length	(READ_BL_LEN)	4	9	R	[83:80]
partial blocks for read allowed	(READ_BL_PARTIAL)	1	0	R	[79:79]
write block misalignment	(WRITE_BLK_MISALIGN)	1	0	R	[78:78]
read block misalignment	(READ_BLK_MISALIGN)	1	0	R	[77:77]
DSR implemented	DSR_IMP	1	x	R	[76:76]
reserved	-	6	00 0000b	R	[75:70]
device size	C_SIZE	22	00 xxxxh	R	[69:48]
reserved	-	1	0	R	[47:47]
erase single block enable	(ERASE_BLK_EN)	1	1	R	[46:46]
erase sector size	(SECTOR_SIZE)	7	7Fh	R	[45:39]
write protect group size	(WP_GRP_SIZE)	7	0000000b	R	[38:32]
write protect group enable	(WP_GRP_ENABLE)	1	0	R	[31:31]
reserved	2	00b	R	[30:29]
write speed factor	(R2W_FACTOR)	3	010b	R	[28:26]
max. write data block length	(WRITE_BL_LEN)	4	9	R	[25:22]
partial blocks for write allowed	(WRITE_BL_PARTIAL)	1	0	R	[21:21]
reserved	-	5	00000