stm32H7 HAL库操作内部Flash BANK2(0x08100000)读写不正常

一、stm32H7 HAL库操作内部Flash BANK2读写不正常

超过1M写道bank2(0x08100000) 后面的内容不正常
HAL_FLASH_Program函数 返回错误 由于用的旧版本HAL库
看到安富莱贴子中关于旧版HAL BUG的问题参考新版HAL做了更改后仍然出现错误 不能正常写
决定采用寄存器方式写 不用HAL库 便将正点原子的寄存器版本中的STMFLASH_Write8Word
底层函数移植过来 问题解决

HAL_StatusTypeDef HAL_FLASH_Program(uint32_t TypeProgram, uint32_t FlashAddress, uint64_t DataAddress)
{
  HAL_StatusTypeDef status = HAL_ERROR;
  __IO uint64_t *dest_addr = (__IO uint64_t *)FlashAddress;
  __IO uint64_t *src_addr = (__IO uint64_t*)((uint32_t)DataAddress);
  uint32_t bank;
  uint8_t row_index = 4;
  
  /* Process Locked */
  __HAL_LOCK(&pFlash);

  /* Check the parameters */
  assert_param(IS_FLASH_TYPEPROGRAM(TypeProgram));
  assert_param(IS_FLASH_PROGRAM_ADDRESS(FlashAddress));

  if(IS_FLASH_PROGRAM_ADDRESS_BANK1(FlashAddress))
  {
    bank = FLASH_BANK_1;
  }
  else
  {
    bank = FLASH_BANK_2;    
  }
  
  /* Wait for last operation to be completed */
  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, bank);
  
  if(status == HAL_OK)
  {
    if(bank == FLASH_BANK_1)
    {
      /* Clear bank 1 pending flags (if any) */ 
      __HAL_FLASH_CLEAR_FLAG_BANK1(FLASH_FLAG_EOP_BANK1 | FLASH_FLAG_QW_BANK1 | FLASH_FLAG_WBNE_BANK1 | FLASH_FLAG_ALL_ERRORS_BANK1); 
  
      /* Set PG bit */
      SET_BIT(FLASH->CR1, FLASH_CR_PG);
    }
    else
    {
      /* Clear bank 2 pending flags (if any) */ 
      __HAL_FLASH_CLEAR_FLAG_BANK2(FLASH_FLAG_EOP_BANK2 | FLASH_FLAG_QW_BANK2 | FLASH_FLAG_WBNE_BANK2 | FLASH_FLAG_ALL_ERRORS_BANK2); 
  
      /* Set PG bit */
      SET_BIT(FLASH->CR2, FLASH_CR_PG);  
    }
  
    __ISB();
    __DSB();
    /* Program the 256 bits flash word */
#if 0
    do
    {
      *dest_addr++ = *src_addr++;
    } while (--row_index != 0);
#else
    do
     {
       *dest_addr = *src_addr;
       dest_addr++;
       src_addr++;
       row_index--;
     } while (row_index != 0U);

#endif
    __ISB();
    __DSB();
    
    /* Wait for last operation to be completed */
    status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE, bank);
    
    if(bank == FLASH_BANK_1)
    {
      /* Check FLASH End of Operation flag  */
      if (__HAL_FLASH_GET_FLAG_BANK1(FLASH_FLAG_EOP_BANK1))
      {
        /* Clear FLASH End of Operation pending bit */
        __HAL_FLASH_CLEAR_FLAG_BANK1(FLASH_FLAG_EOP_BANK1);
      }
    
      /* If the program operation is completed, disable the PG*/
      CLEAR_BIT(FLASH->CR1, FLASH_CR_PG);
    }
    else
    {
      /* Check FLASH End of Operation flag  */
      if (__HAL_FLASH_GET_FLAG_BANK2(FLASH_FLAG_EOP_BANK2))
      {
        /* Clear FLASH End of Operation pending bit */
        __HAL_FLASH_CLEAR_FLAG_BANK2(FLASH_FLAG_EOP_BANK2);
      }
    
      /* If the program operation is completed, disable the PG */
      CLEAR_BIT(FLASH->CR2, FLASH_CR_PG);
    }
  }

  /* Process Unlocked */
  __HAL_UNLOCK(&pFlash);

  return status;  
}

u8 STMFLASH_Write8Word(u32 faddr, u32* pdata)
{
	u8 nword=8;	//每次写8个字,256bit
	u8 res;
	u8 bankx=0;
	if(faddr<BANK2_FLASH_SECTOR_0)bankx=0;	//判断地址是在bank0,还是在bank1
	else bankx=1;
	res=STMFLASH_WaitDone(bankx,0XFF);	 
	if(res==0)	//OK
	{
		if(bankx==0)	//BANK1	编程
		{ 
			FLASH->CR1&=~(3<<4);	//PSIZE1[1:0]=0,清除原来的设置 
			FLASH->CR1|=2<<4;		//设置为32bit宽
			FLASH->CR1|=1<<1;		//PG1=1,编程使能 
		}else			//BANK2 编程
		{
			FLASH->CR2&=~(3<<4);	//PSIZE2[1:0]=0,清除原来的设置 
			FLASH->CR2|=2<<4;		//设置为32bit宽
			FLASH->CR2|=1<<1;		//PG2=1,编程使能 
		} 
		while(nword)
		{
			*(vu32*)faddr=*pdata;	//写入数据
			faddr+=4;				//写地址+4
			pdata++;				//偏移到下一个数据首地址
			nword--;
		}
		__DSB();					//写操作完成后,屏蔽数据同步,使CPU重新执行指令序列
		res=STMFLASH_WaitDone(bankx,0XFF);	//等待操作完成,一个字编程,最多100us.

		if(bankx==0)FLASH->CR1&=~(1<<1);//PG1=0,清除扇区擦除标志
		else FLASH->CR2&=~(1<<1);		//PG2=0,清除扇区擦除标志
	} 
	return res;
}