基于N32L406MB EasyFlash参数（key-value）记录库移植

EasyFlash

感谢作者的分享https://github.com/armink/EasyFlash

EasyFlash是一款开源的轻量级嵌入式Flash存储器库，方便开发者更加轻松的实现基于Flash存储器的常见应用开发

三大实用功能

1. ENV快速保存产品参数(key-value)，支持 写平衡（磨损平衡） 及 掉电保护 功能

EasyFlash不仅能够实现对产品的 设定参数 或 运行日志 等信息的掉电保存功能，还封装了简洁的 增加、删除、修改及查询 方法， 降低了开发者对产品参数的处理难度，也保证了产品在后期升级时拥有更好的扩展性。让Flash变为NoSQL（非关系型数据库）模型的小型键值（Key-Value）存储数据库。

2. IAP 在线升级再也不是难事儿

该库封装了IAP(In-Application Programming)功能常用的接口，支持CRC32校验，同时支持Bootloader及Application的升级。

3. Log 无需文件系统，日志可直接存储在Flash上

移植

下载源码

https://github.com/armink/EasyFlash

https://gitee.com/Armink/EasyFlash

复制源码

添加源码至工程

配置文件参考stm32f103中的配置文件和接口文件

添加头文件

…\middle\easyflash\inc

修改配置文件

#ifndef EF_CFG_H_
#define EF_CFG_H_

#include "n32l40x.h"

/* 使用 ENV 功能 默认NG using ENV function, default is NG (Next Generation) mode start from V4.0 */
#define EF_USING_ENV

/* 使用 IAP 功能  using IAP function */
//#define EF_USING_IAP

/* using save log function */
/* #define EF_USING_LOG */

/* stm32 的扇区大小 page size for stm32 flash */
#if defined(STM32F10X_LD) || defined(STM32F10X_LD_VL) || defined (STM32F10X_MD) || defined (STM32F10X_MD_VL)
#define PAGE_SIZE     1024
#else
#define PAGE_SIZE     2048  //N32L406=>2K
#endif

/* 最小的擦除大小 the minimum size of flash erasure */
#define EF_ERASE_MIN_SIZE         PAGE_SIZE              /* it is one page for STM3210x */

/* 闪存写入粒度，单位：位 the flash write granularity, unit: bit
 * only support 1(nor flash)/ 8(stm32f4)/ 32(stm32f1)/ 64(stm32l4) */
#define EF_WRITE_GRAN             32

/* The size of read_env and continue_ff_addr function used*/
#define EF_READ_BUF_SIZE             32     /* @default 32, 较大的数字可以提高alloc_env的首次速度，但需要更多的堆栈空间Larger numbers can improve first-time speed of alloc_env but require more stack space*/

/*
 *
 * This all Backup Area Flash storage index. All used flash area configure is under here.
 * |----------------------------|   Storage Size
 * | Environment variables area |   ENV area size @see ENV_AREA_SIZE
 * |----------------------------|
 * |      Saved log area        |   Log area size @see LOG_AREA_SIZE
 * |----------------------------|
 * |(IAP)Downloaded application |   IAP already downloaded application, unfixed size
 * |----------------------------|
 *
 * @note all area sizes must be aligned with EF_ERASE_MIN_SIZE
 *
 * The EasyFlash add the NG (Next Generation) mode start from V4.0. All old mode before V4.0, called LEGACY mode.
 *
 * - NG (Next Generation) mode is default mode from V4.0. It's easy to settings, only defined the ENV_AREA_SIZE.
 * - The LEGACY mode has been DEPRECATED. It is NOT RECOMMENDED to continue using.
 *   Beacuse it will use ram to buffer the ENV and spend more flash erase times.
 *   If you want use it please using the V3.X version.
 */

/* 备份区域起始地址 backup area start address  N32L406MB 128K 24K*/
#define EF_START_ADDR                  (FLASH_BASE + 100 * 1024) /* from the chip position: 100KB */

/* ENV区域大小。GC至少有一个空扇区。因此，它的定义必须大于或等于2个闪存扇区大小 ENV area size. It's at least one empty sector for GC. So it's definination must more then or equal 2 flash sector size. */
#define ENV_AREA_SIZE                  (10 * EF_ERASE_MIN_SIZE)      /* 8K */

/* saved log area size */
/* #define LOG_AREA_SIZE             (10 * EF_ERASE_MIN_SIZE)*/      /* 20K */



/* 输出调试信息 print debug information of flash */

#define PRINT_DEBUG											 //自定义调试答应函数

#endif /* EF_CFG_H_ */

实现接口文件

本实验是基于国民技术的N32L406

#include <easyflash.h>
#include <stdio.h>
#include <stdlib.h>
#include <stdarg.h>
#include "elog.h"/* 默认的环境变量设置default environment variables set for user */
static const ef_env default_env_set[] = {
        {"iap_need_copy_app","0"},
        {"iap_copy_app_size","0"},
        {"stop_in_bootloader","0"},
        {"device_id","1"},
        {"boot_times","0"},
};



/**
 * Flash port for hardware initialize.
 *
 * @param default_env default ENV set for user
 * @param default_env_size default ENV size
 *
 * @return result
 */
EfErrCode ef_port_init(ef_env const **default_env, size_t *default_env_size) {
    EfErrCode result = EF_NO_ERR;

    *default_env = default_env_set;
    *default_env_size = sizeof(default_env_set) / sizeof(default_env_set[0]);
	
	//时钟初始化
	if(FLASH_HSICLOCK_DISABLE == FLASH_ClockInit())
    {
        printf("HSI oscillator not yet ready\r\n");
        while(1);
    }
    return result;
}

/**
 * Read data from flash.
 * @note This operation's units is word.
 *
 * @param addr flash address
 * @param buf buffer to store read data
 * @param size read bytes size这里大小是字节
 *
 * @return result
 */
EfErrCode ef_port_read(uint32_t addr, uint32_t *buf, size_t size) {
    EfErrCode result = EF_NO_ERR;
    uint8_t *buf_8 = (uint8_t *)buf;
    size_t i;

    /*copy from flash to ram */
    for (i = 0; i < size; i++, addr ++, buf_8++) {
        *buf_8 = *(uint8_t *) addr;
    }

    return result;
}

/**
 * Erase data on flash.
 * @note This operation is irreversible.
 * @note This operation's units is different which on many chips.
 *
 * @param addr flash address	flash地址
 * @param size erase bytes size  这里大小是字节
 *
 * @return result
 */
EfErrCode ef_port_erase(uint32_t addr, size_t size) {
    EfErrCode result = EF_NO_ERR;
//    FLASH_Status flash_status;
//    size_t erase_pages, i;
//    
//    /* make sure the start address is a multiple of FLASH_ERASE_MIN_SIZE */
//    EF_ASSERT(addr % EF_ERASE_MIN_SIZE == 0);
//    
//    /* calculate pages */
//    erase_pages = size / PAGE_SIZE;
//    if (size % PAGE_SIZE != 0) {
//        erase_pages++;
//    }

//    /* start erase */
//    FLASH_Unlock();
//    FLASH_ClearFlag(FLASH_FLAG_BSY | FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);
//    for (i = 0; i < erase_pages; i++) {
//        flash_status = FLASH_ErasePage(addr + (PAGE_SIZE * i));
//        if (flash_status != FLASH_COMPLETE) {
//            result = EF_ERASE_ERR;
//            break;
//        }
//    }
//    FLASH_Lock();


 /* 解锁*/
    FLASH_Unlock();

    /* 擦除 */
    if (FLASH_COMPL != FLASH_EraseOnePage(addr))
    {
        while(1)
        {
            printf("Flash EraseOnePage Error. Please Deal With This Error Promptly\r\n");
        }
    }
		//加锁
		FLASH_Lock();

    return result;
}
/**
 * Write data to flash.
 * @note This operation's units is word.
 * @note This operation must after erase. @see flash_erase.
 *
 * @param addr flash address
 * @param buf the write data buffer
 * @param size write bytes size
 *
 * @return result
 */
EfErrCode ef_port_write(uint32_t addr, const uint32_t *buf, size_t size) {
    EfErrCode result = EF_NO_ERR;
    size_t i;
    uint32_t read_data;

//    FLASH_Unlock();
//    FLASH_ClearFlag(FLASH_FLAG_BSY | FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);
//    for (i = 0; i < size; i += 4, buf++, addr += 4) {
//        /* write data */
//        FLASH_ProgramWord(addr, *buf);
//        read_data = *(uint32_t *)addr;
//        /* check data */
//        if (read_data != *buf) {
//            result = EF_WRITE_ERR;
//            break;
//        }
//    }
//    FLASH_Lock();
	
	
	/* 解锁*/
    FLASH_Unlock();
	 /* Program */
    for (uint32_t Counter_Num = 0; Counter_Num < size; Counter_Num += 4,buf++)
    {
        if (FLASH_COMPL != FLASH_ProgramWord(addr + Counter_Num, *buf))
        {
            while(1)
            {
                printf("Flash ProgramWord Error. Please Deal With This Error Promptly\r\n");
            }
        }
    }

    /* Locks the FLASH Program Erase Controller */
    FLASH_Lock();

    return result;
}

/**
 * lock the ENV ram cache
 */
void ef_port_env_lock(void) {
    __disable_irq();
}

/**
 * unlock the ENV ram cache
 */
void ef_port_env_unlock(void) {
    __enable_irq();
}

static char log_buf[128];

/**
 * This function is print flash debug info.
 *
 * @param file the file which has call this function
 * @param line the line number which has call this function
 * @param format output format
 * @param ... args
 *
 */
void ef_log_debug(const char *file, const long line, const char *format, ...) {

#ifdef PRINT_DEBUG
	
    va_list args;

    /* args point to the first variable parameter */
    va_start(args, format);
  
    /* must use vprintf to print */
    vsprintf(log_buf, format, args);
    log_d("[easyflash]:%s", log_buf);
   // printf("\r");
    va_end(args);

#endif

}

/**
 * This function is print flash routine info.
 *
 * @param format output format
 * @param ... args
 */
void ef_log_info(const char *format, ...) {
    va_list args;

    /* args point to the first variable parameter */
    va_start(args, format);
    /* must use vprintf to print */
    vsprintf(log_buf, format, args);
		log_i("[easyflash]:%s", log_buf);
   // printf("\r");
    va_end(args);
}


/**
 * This function is print flash non-package info.
 *
 * @param format output format
 * @param ... args
 */
void ef_print(const char *format, ...) {
    va_list args;

    /* args point to the first variable parameter */
    va_start(args, format);
    /* must use vprintf to print */
    vsprintf(log_buf, format, args);
    log_v("%s\r\n", log_buf);
    va_end(args);
}

添加测试代码

这里的第一步就是初始化easyflash_init

void easyflash_demo(void)
{
    if (easyflash_init() == EF_NO_ERR)
    {
        uint32_t i_boot_times = NULL;
        char *c_old_boot_times, c_new_boot_times[11] = {0};

        /* 从Env获取启动次数(boot_times) */
        c_old_boot_times = ef_get_env("boot_times");
        assert_param(c_old_boot_times);
        i_boot_times = atol(c_old_boot_times);
        /* 启动次数 +1 */
        i_boot_times ++;
        log_v("The system now boot %d times\n\r", i_boot_times);
        /* 格式化一个字符串 */
        sprintf(c_new_boot_times,"%d", i_boot_times);
        /* 设置启动次数*/
        ef_set_env("boot_times", c_new_boot_times);
        //保存
        ef_save_env();
    }
}

磨损平衡）

blob 数据类型的保存和读取测试

  /**blob 数据类型的保存和读取测试*/
        char buff[10];
        memset(buff,0,10);
        if(i_boot_times&1)
        {
            int save_len;
            ef_get_env_blob("blob",buff,10,&save_len);
            elog_hexdump("blob ",10,buff,10);
        }
        else{
           
            for(int i=0;i<10;i++)
            {
                buff[i]=i_boot_times&0xff;
            }
            ef_set_env_blob("blob",buff,10);
           
        }