spice model parameter

===================BSIM4.3.0 Model Selectors/Controllers============

LEVEL SPICE3 model selector

VERSION Model version

BINUNIT Binning unitr

PARAMCHK Switch for parameter value check

MOBMOD Mobility model

RDSMOD Bias-dependent source/drain resistance model

IGCMOD Gate-to-channel tunneling current model

IGBMOD Gate-to-substrate tunneling current model

CAPMOD Capacitance model

RGATEMOD Gate resistance model

RBODYMOD Substrate resistance network model

TRNQSMOD Transient NQS model

ACNQSMOD AC small-signal NQS model

FNOIMOD Flicker noise model

TNOIMOD Thermal noise model

DIOMOD Source/drain junction diode IV

TEMPMOD Temperature mode selector

PERMOD Whether PS/PD includes the gate-edge perimeter

GEOMOD Geometry-dependent parasitics

RGEOMOD Source/drain diffusion resistance and contact model  

 

=====================Process Parameters======================

EPSROX Gate dielectric constant relative to vacuum 3.9 (SiO2)

TOXE Electrical gate equivalent oxide thicknes

TOXP Physical gate equivalent oxide thickness

TOXM Tox at which parameters are extracted

DTOX Defined as (TOXE-TOXP)

XJ S/D junction depth

GAMMA1 (g1 in equation) Body-effect coefficient near the surface

GAMMA2 (g2 in equation) Body-effect coefficient in bulk

NDEP Channel doping concentration at depletion edge for zero body bias

NSUB Substrate doping concentration

NGATE Poly Si gate doping concentration

NSD Source/drain doping concentration

VBX Vbs at which the depletion region width equalsXT

XT Doping depth 1.55e-7m Yes -

RSH Source/drain sheet resistance

RSHG Gate electrode sheet resistance

 

=======================Basic Model Parameters==========================

VTH0 or VTHO Long-channel threshold voltage at Vbs=0 0.7V (NMOS) -0.7V (PMOS) Yes Note-4

VFB Flat-band voltage -1.0V Yes Note-4

PHIN Non-uniform. vertical doping effect on surface potential 0.0V Yes -

K1 First-order body bias coefficient 0.5V1/2 Yes Note-5

K2 Second-order body bias coefficient 0.0 Yes Note-5

K3 Narrow width coefficient 80.0 Yes -

K3B Body effect coefficient of K3 0.0 V-1 Yes -

W0 Narrow width parameter 2.5e-6m Yes -

LPE0 Lateral non-uniform. doping parameter at Vbs=0 1.74e-7m Yes -

LPEB Lateral non-uniform. doping effect on K1 0.0m Yes -

VBM Maximum applied body bias in VTH0 calculation -3.0V Yes -

DVT0 First coefficient of short-channel effect on Vth 2.2 Yes -

DVT1 Second coefficient of short-channel effect on Vth 0.53 Yes -

DVT2 Body-bias coefficient of short-channel effect on Vth -0.032V-1 Yes -

DVTP0 First coefficient of drain-inducedVth shift due to for long-channel pocket devices 0.0m Yes Not modeled if binned DVTP0 <=0.0

DVTP1 First coefficient of drain-inducedVth shift due to for long-channel pocket devices 0.0V-1 Yes -

DVT0W First coefficient of narrow width effect on Vth for small channel length 0.0 Yes -

DVT1W Second coefficient of narrow width effect on Vth for small channel length 5.3e6m-1 Yes -

DVT2W Body-bias coefficient of narrow width effect for small channel length -0.032V-1 Yes -

U0 Low-field mobility 0.067 m2/(Vs) (NMOS); 0.025 m2/(Vs) PMOS Yes -

UA Coefficient of first-order mobility degradation due to vertical field 1.0e-9m/V for MOBMOD =0 and 1; 1.0e-15m/V for MOBMOD =2 Yes -

UB Coefficient of secon-order mobility degradation due to vertical field 1.0e-19m2/ V2 Yes -

UC Coefficient of mobility degradation due to body-bias effect -0.0465V-1 for MOBMOD=1; -0.0465e-9 m/V2 for MOBMOD =0 and 2 Yes -

EU Exponent for mobility degradation of MOBMOD=2 1.67 (NMOS); 1.0 (PMOS) -

VSAT Saturation velocity 8.0e4m/s Yes -

A0 Coefficient of channel-length dependence of bulk charge effect 1.0 Yes -

AGS Coefficient of Vgs dependence of bulk charge effect 0.0V-1 Yes -

B0 Bulk charge effect coefficient for channel width 0.0m Yes -

B1 Bulk charge effect width offset 0.0m Yes -

KETA Body-bias coefficient of bulk charge effect -0.047V-1 Yes -

A1 First non-saturation effect parameter 0.0V-1 Yes -

A2 Second non-saturation factor 1.0 Yes -

WINT Channel-width offset parameter 0.0m No -

LINT Channel-length offset parameter 0.0m No -

DWG Coefficient of gate bias dependence of Weff 0.0m/V Y