基于gmID参数运算放大器设计
基于gmID参数运算放大器设计
摘要:介绍一种基于gm/ID 参数特性的模拟电路优化设计方法,并以CMOS密勒补偿运算放大器的设计为例具体阐述该方法的基本设计步骤。该方法以统一的gm/ID与ID/(W/L)的关系曲线为基本设计出发点,综合电路的其它设计要求,而提出的一种优化性能指标的设计思路。对所设计的运算放大器模拟仿真验证了这种方法的有效性。
关键词:运算放大器;CMOS;gm/ID
中图分类号:TN432文献标识码:A文章编号:1009-3044(2007)16-31020-03
Design of Amplifiers Based on gm/ID Parameter
CHEN De-bing,CHANG Chang-yuan
(Institute of Integrated Circuit,Southeast University,Nanjing 210096,China)
Abstract:The aim of this paper is to present a transistor optimization methodology for analog integrated CMOS circuits,based on the physics-based gm/ID characteristics,This method dependents curve of gm/IDandID/(W/L)in all operations regions are integrated with other design specifications, providing solutions close to the optimum。As an example, we show the results obtained for the design of a CMOS Miller op