STM8S003F读写内存数据

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一、前言

本次使用STM8S003F芯片，编译环境为IAR，至于新建工程什么的教程很多，这里就不多叙述了。本次需要往内存存储数据，STM8S003F有128bytes EEPROM存储数据。

二、EEPROM解锁内存

因为只用到了EEPROM，因此只解锁了EEPROM，若要使用FLASH，可以将注释掉的代码使用。

void FLASH_Config(void)
{
 /* Define flash programming Time*/
  FLASH_SetProgrammingTime(FLASH_PROGRAMTIME_STANDARD);

  // FLASH_Unlock(FLASH_MEMTYPE_PROG);
  // /* Wait until Flash Program area unlocked flag is set*/
  // while (FLASH_GetFlagStatus(FLASH_FLAG_PUL) == RESET)
  // {}

  /* Unlock flash data eeprom memory */
  FLASH_Unlock(FLASH_MEMTYPE_DATA);
  /* Wait until Data EEPROM area unlocked flag is set*/
  while (FLASH_GetFlagStatus(FLASH_FLAG_DUL) == RESET)
  {}
}

三、读写EEPROM函数

将EEPROM开头地址映射为0，封装后的函数便于调用，不用管写入内存到哪里了：
写数据函数：

uint8_t flash_date_write(uint32_t Addr, uint8_t *source, uint8_t nbyte)
{
  uint8_t i = 0;
  uint32_t FlashAddr = Addr+FLASH_DATA_START_PHYSICAL_ADDRESS;
  if((FlashAddr<FLASH_DATA_START_PHYSICAL_ADDRESS) || (FlashAddr+nbyte>FLASH_DATA_END_PHYSICAL_ADDRESS))
  {
    return FALSE;
  }
  //按字节写入
  for(i=0;i<nbyte;i++)
  {
    FLASH_ProgramByte(FlashAddr+i,source[i]);
    FLASH_WaitForLastOperation(FLASH_MEMTYPE_DATA);
  }
  return TRUE;

}

读数据函数：

uint8_t flash_date_read(uint32_t Addr, uint8_t *source, uint8_t nbyte)
{
  uint8_t i = 0;
  uint32_t FlashAddr = Addr+FLASH_DATA_START_PHYSICAL_ADDRESS;
  if((FlashAddr<FLASH_DATA_START_PHYSICAL_ADDRESS) || (FlashAddr+nbyte>FLASH_DATA_END_PHYSICAL_ADDRESS))
  {
    return FALSE;
  }
  //按字节写入
  for(i=0;i<nbyte;i++)
  {
    source[i] = FLASH_ReadByte(FlashAddr+i);
    FLASH_WaitForLastOperation(FLASH_MEMTYPE_DATA);
  }
  return TRUE;

}

读写数据例程：

uint8_t wBuf[]={0x10,0x20,0x30,0x40,0x50,0x60,0x70,0x80};
flash_date_write(0,wBuf,8);
uint8_t rBuf[8];
flash_date_read(0,rBuf,8);
RS485_SEND;
TxIndex=0;
    while (TxIndex<8)
    {
      UART1_SendData8(rBuf[TxIndex]);
      while (UART1_GetFlagStatus(UART1_FLAG_TXE) == RESET);
      TxIndex++;
    }
  Delay(100);