《Digital Integrated Circuits》读后笔记(一)

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Chapter 3 The device

1) The Diode

a. built-in potential forward bias reverse bias

b. thermal generation of hole and electron pairs in the depletion region reverse currents are substantially larger than the saturation current $I_s$

c. Dynamic Behavior Depletion-Region Capacitance $C_j$

$$C_j=\frac{C_{j0}}{\sqrt{1-V_D/{\varphi }_0}}$$ $V_D<0$ , $|V_D|$ increases, $C_j$ decreases

d. Secondary Effects breakdown voltage avalanche breakdown not destructive

Zener breakdown

$$\{\begin{array}{l}{I}_d=I_s(e^{V_D/{\varphi }_T}-1)\\ {\varphi }_T=\frac{KT}{q}\end{array}$$ operating temperature ${\varphi }_T$ increases with $T$, $I_d$ decreases at the same time. $I_s$ increases with $T$

Increasing the temperature causes the leakage current to increase.

2) The MOSFET Transistor

a. four terminal device gate source drain body NMOS PMOS

strong inversion threshold voltage $V_T$

$$\{\begin{array}{l}{V}_T=\end{array}$$