《Low power design essential》读后笔记(二)

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chapter 2

1. sub-100 nm

• leakage behavior of the transistor

• variability

• innovative devices

summarized as follow:
a linear dependence exists between voltage and current; threshold is a function of channel length and operational voltages.

2. $I_D-V_{DS}$

velocity-saturation effect

decrease in output resistance of the device in saturation
Reason:

• channel-length modulation
• drain-induced barrier lowering(DIBL) which is also related to a reduction of the threshold voltage
• SCBE(Substrate Current Body Effect)

Model:

• $$I_{Dsat}={\upsilon }_{Sat}W{C}_{ox}\frac{(V_{GS}-V_{TH}{)}^2}{(V_{GS}-V_{TH})+E_{C}L}$$ $E_C$ the critical electrical field

• the unified model
  { I D = 0 f o r V G T ≤ 0 I D = k ’ W L ( V G T V m i n − V m i n 2 2 ) ( 1 + λ V D